2N7002K
N-Channel MOSFET
Features
Unit
V
DS
Drain-source Voltage 60 V
I
D
Drain Current 340 mA
P
D
Total Power Dissipation 350 mW
T
J
Operating Junction Temperature -55 to +150
к
T
STG
Storage Temperature -55 to +150
к
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
A
B
C
D
E
F
G
H
.079
2.000
in
h
mm
.
1
.800
.035
.900
.
7
.950
.037
.950
K
2
3
1
1.GATE
2. SOURCE
3. DRAIN
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: D 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 7
• High density cell design for low RDS(ON)
• Voltage controlled small signal switch
• Rugged and reliable
• ESD Protected up to 2KV (HBM)
• Marking : 72K
Symbol
Rating
Maximum Ratings @ 25
O
C Unless Otherwise Specified
Rating
•
Halogen free available upon request by adding suffix "-HF"
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
B .083 .104 2.10 2.64
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
V
(BR)DSS
Drain-Source Breakdown Voltage
(V
GS
=0Vdc, I
D
=10µAdc)
60 --- --- Vdc
V
GS(th)
Gate-Threshold Voltage
(V
DS
=V
GS
, I
D
=1mAdc)
1.0
--- --- Vdc
I
GSS
Gate-body Leakage
(V
DS
=0Vdc, V
GS
=
f
10Vdc)
--- --- f
200
nAdc
I
DSS
Zero Gate Voltage Drain Current
(V
DS
=48Vdc, V
GS
=0Vdc)
--- --- 1 uAdc
r
DS(on)
Drain-Source On-Resistance
(V
GS
=4.5Vdc, I
D
=200mAdc)
(V
GS
=10Vdc, I
D
=500mAdc)
---
---
---
---
5.3
5.0
Ω
V
SD
Diode Forward Voltage
(V
GS
=0Vdc, I
S
=300mAdc)
--- --- 1.5 Vdc
C
iss
Input Capacitance --- --- 40
C
OSS
Output Capacitance --- --- 30
C
rSS
Reverse Transfer
V
DS
=10Vdc,
V
GS
=0Vdc
f=1MHz
--- --- 10
pF
Switching
t
d(on)
Turn-on Time --- --- 10
t
d(off)
Turn-off Time
--- --- 15
www.mccsemi.com
(V
DS
=0Vdc, V
GS
=
f
5Vdc)
--- --- f
100
nAdc
(dl
s
/dt=-100A/µS)
Qr
(VGS=0V, IS=300mA,VR=25V,)
Recovered charge
--- ---
30
nC
V
DD
=50 V, R
L
=250Ω,
R
GS
=50Ω,V
GS
=10 V,
R
G
=50Ω
V
GS=0V, IS=300mA,
VR=25V,
dl
s
/dt=-100A/µS
t
rr
RthJA Thermal Resistance fromJunction to Ambient 357
к/W
V
GS
Gate-source Voltage V
I
GSS
Gate-body Leakage
(V
DS
=0Vdc, V
GS
=
f
10Vdc)
--- --- f
200
nAdc
f
20
