IDT8N4DV75 Data Sheet LVDS DUAL-FREQUENCY PROGRAMMABLE VCXO
IDT8N4DV85CCD
REVISION B NOVEMBER 20, 2013 6 ©2013 Integrated Device Technology, Inc.
AC Electrical Characteristics
Table 5A. AC Characteristics, V
CC
=
3.3V ± 5% or V
CC
=
2.5V ± 5%, T
A
= -40°C to 85°C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
f
OUT
Output Frequency Q
15.476 866.67 MHz
975 1300 MHz
f
I
Initial Accuracy Measured @ 25°C, V
C
= V
CC
/2 ±10 ppm
f
S
Temperature Stability
Option code = A or B ±100 ppm
Option code = E or F ±50 ppm
Option code = K or L ±20 ppm
f
A
Aging
Frequency drift over 10 year life ±3 ppm
Frequency drift over 15 year life ±5 ppm
f
T
Total Stability
Option code A, B (10 year life) ±113 ppm
Option code E, F (10 year life) ±63 ppm
Option code K, L (10 year life) ±33 ppm
tjit(cc) Cycle-to-Cycle Jitter
NOTE 1
6 14 ps
tjit(per) RMS Period Jitter
NOTE1
4 6 ps
tjit(Ø)
RMS Phase Jitter
(Random)
NOTE 2,3
156.25MHz, Integration Range:
12kHz - 20MHz
0.47 0.71 ps
tjit(Ø)
RMS Phase Jitter
(Random)
NOTE 2,3
f
XTAL
= 114.285MHz
15.576MHz f
out
100MHz,
Integration Range:
12kHz - 20MHz
0.76 1.4 ps
100MHz < f
out
500MHz,
Integration Range:
12kHz - 20MHz
0.48 0.63 ps
500MHz < f
out
1300MHz,
Integration Range:
12kHz - 20MHz
0.46 0.67 ps
N
(100)
Single-side band phase noise,
100Hz from Carrier
156.25MHz -58 dBc/Hz
N
(1k)
Single-side band phase noise,
1kHz from Carrier
156.25MHz -86 dBc/Hz
N
(10k)
Single-side band phase noise,
10kHz from Carrier
156.25MHz -111 dBc/Hz
N
(100k)
Single-side band phase noise,
100kHz from Carrier
156.25MHz -117 dBc/Hz
N
(1M)
Single-side band phase noise,
1MHz from Carrier
156.25MHz -126 dBc/Hz
N
(10M)
Single-side band phase noise,
10MHz from Carrier
156.25MHz -136 dBc/Hz
PSNR Power Supply Noise Ratio
50mV Sinusoidal Noise
1kHz - 50MHz
-58.7 dBc/Hz
t
R
/ t
F
Output Rise/Fall Time 20% to 80% 80 500 ps