LTC1150
3
1150fb
LTC1150M LTC1150C
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
Input Offset Voltage (Note 3) ±0.5 ±10 ±0.05 ±10 µV
Average Input Offset Drift (Note 3) ● ±0.01 ±0.05 ±0.01 ±0.05 µV/°C
Long Term Offset Voltage Drift 50 50 µV/√mo
Input Offset Current ±10 ±60 ±10 ±60 pA
Input Bias Current ±5 ±30 ±5 ±30 pA
Input Noise Voltage R
S
= 100Ω, 0.1Hz to 10Hz, TC2 2.0 2.0 µV
P-P
R
S
= 100Ω, 0.1Hz to 1Hz, TC2 0.7 0.7
Input Noise Current f = 10Hz (Note 4) 1.3 1.3 fA/√Hz
Common Mode Rejection Ratio V
CM
= 0V to 2.7V ● 106 130 106 130 dB
Power Supply Rejection Ratio V
S
= ±2.375V to ±16V ● 120 145 120 145 dB
Large-Signal Voltage Gain R
L
= 10kΩ, V
OUT
= 0.3V to 4.5V ● 115 180 115 180 dB
Maximum Output Voltage Swing R
L
= 10kΩ 0.15 to 4.85 0.15 to 4.85 V
R
L
= 100kΩ 0.02 to 4.97 0.02 to 4.97
Slew Rate R
L
= 10kΩ, C
L
= 50pF 1.5 1.5 V/µs
Gain Bandwidth Product 1.8 1.8 MHz
Supply Current No Load 0.4 1 0.4 1 mA
● 1.5 1.5
Internal Sampling Frequency 300 300 Hz
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
S
= ±15V, Pin 1 = Open, unless otherwise noted.
LTC1150M LTC1150C
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
Slew Rate R
L
= 10kΩ, C
L
= 50pF 3 3 V/µs
Gain Bandwidth Product 2.5 2.5 MHz
Supply Current No Load 0.8 1.5 0.8 1.5 mA
No Load, Pin 1 = V
–
0.2 0.2
No Load
● 22
Internal Sampling Frequency 550 550 Hz
The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T
A
= 25°C.
V
S
= 5V, Pin 1 = Open, unless otherwise noted.
ELECTRICAL CHARACTERISTICS
Note 1: Absolute Maximum Ratings are those values beyond which life of
the device may be impaired.
Note 2: Connecting any terminal to voltages greater than V
+
or less than
V
–
may cause destructive latch-up. It is recommended that no sources
operating from external supplies be applied prior to power-up of the
LTC1150.
Note 3: These parameters are guaranteed by design. Thermocouple effects
preclude measurement of these voltage levels in high-speed automatic test
systems. V
OS
is measured to a limit determined by test equipment
capability.
Note 4: Current Noise is calculated from the formula:
I
N
= √(2q • I
b
)
where q = 1.6 • 10
–19
Coulomb.