IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 15 V; I
D
= I
T
Note 1 14 24 S
C
iss
3900 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 500 pF
C
rss
130 pF
t
d(on)
28 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
30 ns
t
d(off)
R
G
= 1 Ω (External), 55 ns
t
f
16 ns
Q
g(on)
95 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
27 nC
Q
gd
40 nC
R
thJC
0.50 K/W
R
thCK
0.15 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 26 A
I
SM
Repetitive; pulse width limited by T
JM
104 A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1 1.3 V
t
rr
T
J
= 25°C 250 ns
Q
RM
T
J
= 25°C 0.85 1.5 µC
I
RM
T
J
= 25°C8A
I
F
= I
s
, -di/dt = 100 A/µs,
V
R
= 100 V
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. I
T
test current: IXFR26N50Q I
T
= 13A
IXFR24N50Q I
T
= 12A
3. See IXFH26N50Q data sheet for characteristic curves.
IXFR 24N50Q
IXFR 26N50Q
ISOPLUS 247 OUTLINE
