CAT24C44VI-G

1
Doc. No. MD-1083, Rev. T© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
FEATURES
Single 5V Supply
Infinite EEPROM to RAM Recall
CMOS and TTL Compatible I/O
Low CMOS Power Consumption:
–Active: 3mA Max.
–Standby: 30µA Max.
Power Up/Down Protection
10 Year Data Retention
JEDEC Standard Pinouts:
–8-lead DIP
–8-lead SOIC
100,000 Program/Erase Cycles (EEPROM)
Auto Recall on Power-up
Commercial, Industrial and Automotive
Temperature Ranges
DESCRIPTION
The CAT24C44 Serial NVRAM is a 256-bit nonvolatile
memory organized as 16 words x 16 bits. The high
speed Static RAM array is bit for bit backed up by a
nonvolatile EEPROM array which allows for easy trans-
fer of data from RAM array to EEPROM (STORE) and
from EEPROM to RAM (RECALL). STORE operations
are completed in 10ms max. and RECALL operations
typically within 1.5µs. The CAT24C44 features unlim-
ited RAM write operations either through external RAM
writes or internal recalls from EEPROM. Internal false
PIN CONFIGURATION
store protection circuitry prohibits STORE operations
when V
CC
is less than 3.5V (typical) ensuring EEPROM
data integrity.
The CAT24C44 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed to
endure 100,000 program/erase cycles (EEPROM) and
has a data retention of 10 years. The device is available
in JEDEC approved 8-lead plastic DIP and SOIC
packages.
PIN FUNCTIONS
Pin Name Function
SK Serial Clock
DI Serial Input
DO Serial Data Output
CE Chip Enable
RECALL Recall
STORE Store
V
CC
+5V
V
SS
Ground
SOIC Package ( V)
DI
DO
1
2
3
4
CE
SK
RECALL
V
SS
V
CC
STORE
8
7
6
5
1
2
3
4
8
7
6
5
CE
SK
DI
DO
V
CC
RECALL
V
SS
STORE
DIP Package (L)
256-Bit Serial Nonvolatile CMOS Static RAM
CAT24C44
2
CAT24C44
Doc. No. MD-1083, Rev. T
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
POWER-UP TIMING
(4)
Symbol Parameter Min. Max. Units
VCCSR V
CC
Slew Rate 0.5 0.005 V/m
t
pur
Power-Up to Read Operations 200 µs
t
puw
Power-Up to Write or Store Operation 5 ms
MODE SELECTION
(1)(2)
Software Write Enable Previous Recall
Mode
STORESTORE
STORESTORE
STORE
RECALLRECALL
RECALLRECALL
RECALL Instruction Latch Latch
Hardware Recall
(3)
1 0 NOP X X
Software Recall 1 1 RCL X X
Hardware Store
(3)
0 1 NOP SET TRUE
Software Store 1 1 STO SET TRUE
X = Dont Care
BLOCK DIAGRAM
ROW
DECODE
INSTRUCTION
REGISTER
COLUMN
DECODE
EEPROM ARRAY
STORE
RECAL
L
STATIC RAM
ARRAY
256-BIT
STORE
RECALL
CE
DI
SK
INSTRUCTION
DECODE
4-BIT
COUNTER
CONTROL
LOGIC
V
CC
V
SS
DO
Note:
(1) The store operation has priority over all the other operations.
(2) The store operation is inhibited when V
CC
is below 3.5V.
(3) NOP designates that the device is not currently executing an instruction.
(4) This parameter is tested initially and after a design or process change that affects the parameter.
CAT24C44
3
Doc. No. MD-1083, Rev. T© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. 55°C to +125°C
Storage Temperature....................... 65°C to +150°C
Voltage on Any Pin with
Respect to Ground
(2)
............. 2.0 to +VCC +2.0V
V
CC
with Respect to Ground ............... 2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C)................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current
(3)
........................ 100 mA
*COMMENT
Stresses above those listed under Absolute Maximum
Ratings may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
Note:
(1) These parameter are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
and JEDEC test methods.
(2) The minimum DC input voltage is 0.5V. During transitions, inputs may undershoot to 2.0V for periods of less than 20 ns.
Maximum DC voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from 1V to V
CC
+1V.
CAPACITANCE T
A
= 25°C, f = 1.0 MHz, V
CC
= 5V
Symbol Parameter Max. Unit Conditions
C
I/O
(1)
Input/Output Capacitance 10 pF V
I/O
= 0V
C
IN
(1)
Input Capacitance 6 pF V
IN
= 0V
D.C. OPERATING CHARACTERISTICS
V
CC
= 5V ±10%, unless otherwise specified.
Limits
Symbol Parameter Min. Typ. Max. Unit Conditions
I
CCO
Current Consumption (Operating) 3 mA Inputs = 5.5V, T
A
= 0°C
All Outputs Unloaded
I
SB
Current Consumption (Standby) 30 µA CE = V
IL
I
LI
Input Current 2 µA0 V
IN
5.5V
I
LO
Output Leakage Current 10 µA0 V
OUT
5.5V
V
IH
High Level Input Voltage 2 V
CC
V
V
IL
Low Level Input Voltage 0 0.8 V
V
OH
High Level Output Voltage 2.4 V I
OH
= 2mA
V
OL
Low Level Output Voltage 0.4 V I
OL
= 4.2mA
RELIABILITY CHARACTERISTICS
Symbol Parameter Min. Typ. Max. Units
N
END
(1)
Endurance 100,000 Cycles/Byte
T
DR
(1)
Data Retention 10 Years
V
ZAP
(1)
ESD Susceptibility 2000 Volts
I
LTH
(1)(4)
Latch-up 100 mA

CAT24C44VI-G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC NVSRAM 256 SPI 1MHZ 8SOIC
Lifecycle:
New from this manufacturer.
Delivery:
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