APL602J

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
G
D
S
050-5895 Rev C 8-2003
APT Website - http://www.advancedpower.com
LINEAR MOSFET
SOT-227
G
S
S
D
ISOTOP
®
"UL Recognized"
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
Higher FBSOA
Higher Power Dissipation
Popular SOT-227 Package
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 µA)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 12V)
Drain-Source On-State Resistance
2
(V
GS
= 12V, 21.5A)
Zero Gate Voltage Drain Current (V
DS
= 600V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 480V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
MIN TYP MAX
600
43
0.125
25
250
±100
24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
APL602J
600
43
172
±30
±40
565
4.52
-55 to 150
300
43
50
3000
APL602J
600V 43A 0.125
DYNAMIC CHARACTERISTICS
APL602J
050-5895 Rev C 8-2003
Symbol
C
iss
C
oss
C
rss
t
d
(on)
t
r
t
d
(off)
t
f
MIN TYP MAX
7600 9000
1280 1810
620 930
13 26
24 48
58 87
14 17
UNIT
pF
ns
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= 43A @ 25°C
R
G
= 0.6
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
THERMAL CHARACTERISTICS
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
Symbol
R
θJC
R
θJA
V
Isolation
Torque
MIN TYP MAX
.22
40
2500
10
UNIT
°C/W
Volts
lb•in
1
Repetitive Rating: Pulse width limited by maximum junction
3
See MIL-STD-750 Method 3471
temperature.
4
Starting T
j
=
+25°C, L = 3.24mH, R
G
=
25, Peak I
L
= 43A
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Note:
Duty Factor D =
t
1
/
t
2
Peak T
J
= P
DM
x Z
θJC
+ T
C
t
1
t
2
P
DM
10
-5
10
-4
10
-3
10
-2
10
-1
1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
Z
Θ
JC
, THERMAL IMPEDANCE (°C/W)
SINGLE PULSE
FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL
0.0520
0.155
0.0126
0.0261
F
0.423F
67.451
F
Power
(Watts)
Junction
temp. ( C)
RC MODEL
Case temperature
050-5895 Rev C 8-2003
Typical Performance Curves
APL602J
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
0 50 100 150 200 250 0 5 10 15 20 25 30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, HIGH OUTPUT CHARACTERISTICS FIGURE 3, LOW OUTPUT CHARACTERISTICS
7 V
6 V
6.5 V
V
GS
=10V, 15 V
5.5 V
7.5 V
8 V
120
100
80
60
40
20
0
120
100
80
60
40
20
0
7 V
6 V
6.5 V
5.5 V
7.5 V
V
GS
=10, 15V
8 V
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (°C) T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
0 2 4 6 8 10 0 20 40 60 80 100 120
25 50 75 100 125 150 -50 0 50 100 150
1.30
1.20
1.10
1.00
0.90
0.80
0.70
1.15
1.10
1.05
1.00
0.95
0.90
V
DS
> I
D
(ON) x R
DS
(ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
T
J
= +125°C
T
J
= +25°C
T
J
= -55°C
V
GS
=10V
V
GS
=20V
NORMALIZED TO
V
GS
= 10V @ 21.5A
I
D
, DRAIN CURRENT (AMPERES) I
D
, DRAIN CURRENT (AMPERES)
BV
DSS
(ON), DRAIN-TO-SOURCE BREAKDOWN R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
VOLTAGE (NORMALIZED)
80
60
40
20
0
45
40
35
30
25
20
15
10
05
0

APL602J

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Power MOSFET - Linear
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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