2N5400RLRP Datasheet 2N5400RLRPG, 2N5400G, 2N5400RLRP | P1-P3

March, 2007 − Rev. 2

1 Publication Order Number:

2N5400/D

2N5400

Preferred Device

Amplifier Transistors

PNP Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage V

CEO

120 Vdc

Collector − Base Voltage V

CBO

130 Vdc

Emitter − Base Voltage V

EBO

5.0 Vdc

Collector Current − Continuous I

C

600 mAdc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient R

q

JA

200 °C/W

Thermal Resistance, Junction−to−Case R

q

JC

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

COLLECTOR

3

2

BASE

1

EMITTER

1

2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 1

MARKING DIAGRAM

2N

5400

AYWW G

G

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

2N5400

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(I

C

= 1.0 mAdc, I

B

= 0)

V

(BR)CEO

120 −

Vdc

Collector−Base Breakdown Voltage

(I

C

= 100 mAdc, I

E

= 0)

V

(BR)CBO

130 −

Vdc

Emitter−Base Breakdown Voltage

(I

E

= 10 mAdc, I

C

= 0)

V

(BR)EBO

5.0 − Vdc

Collector Cutoff Current

(V

CB

= 100 Vdc, I

E

= 0)

(V

CB

= 100 Vdc, I

E

= 0, T

A

= 100°C)

I

CBO

−

100

nAdc

mAdc

Emitter Cutoff Current

(V

EB

= 3.0 Vdc, I

C

= 0)

I

EBO

− 50 nAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I

C

= 1.0 mAdc, V

CE

= 5.0 Vdc)

(I

C

= 10 mAdc, V

CE

= 5.0 Vdc)

(I

C

= 50 mAdc, V

CE

= 5.0 Vdc)

h

FE

30

40

−

180

−

Collector−Emitter Saturation Voltage

(I

C

= 10 mAdc, I

B

= 1.0 mAdc)

(I

C

= 50 mAdc, I

B

= 5.0 mAdc)

V

CE(sat)

−

0.2

0.5

Vdc

Base−Emitter Saturation Voltage

(I

C

= 10 mAdc, I

B

= 1.0 mAdc)

(I

C

= 50 mAdc, I

B

= 5.0 mAdc)

V

BE(sat)

−

1.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain — Bandwidth Product

(I

C

= 10 mAdc, V

CE

= 10 Vdc, f = 100 MHz)

f

T

100 400

MHz

Output Capacitance

(V

CB

= 10 Vdc, I

E

= 0, f = 1.0 MHz)

C

obo

− 6.0 pF

Small−Signal Current Gain

(I

C

= 1.0 mAdc, V

CE

= 10 Vdc, f = 1.0 kHz)

h

fe

30 200

−

Noise Figure

(I

C

= 250 mAdc, V

CE

= 5.0 Vdc, R

S

= 1.0 kW, f = 1.0 kHz)

NF − 8.0 dB

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

ORDERING INFORMATION

Device Package Shipping

†

2N5400 TO−92 5000 Unit / Bulk

2N5400G TO−92

(Pb−Free)

5000 Unit / Bulk

2N5400RLRP TO−92 2000 Tape & Reel

2N5400RLRPG TO−92

(Pb−Free)

2000 Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

2N5400

http://onsemi.com

3

Figure 1. DC Current Gain

I

C

, COLLECTOR CURRENT (mA)

30

100

150

200

0.1

h , CURRENT GAIN

0.5 2.0 3.0 100.2 0.3

20

1.0 5.0

FE

T

J

= 125°C

25°C

−55°C

70

50

20 30 50 100

V

CE

= − 1.0 V

V

CE

= − 5.0 V

Figure 2. Collector Saturation Region

I

B

, BASE CURRENT (mA)

1.0

0.1 0.5 2.0 100.2 1.0 5.0 20 50

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0.005 0.01 0.02 0.05

Figure 3. Collector Cut−Off Region

V

BE

, BASE−EMITTER VOLTAGE (VOLTS)

V

CE

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

, COLLECTOR CURRENT (A)μI

C

10

3

0.10.3 0.2

10

2

10

1

10

0

10

−1

10

−2

10

−3

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

I

C

= 1.0 mA 10 mA 30 mA 100 mA

V

CE

= 30 V

I

C

= I

CES

T

J

= 125°C

75°C

25°C

REVERSE FORWARD

2N5400RLRP

2N5400RLRP

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