MBR735, MBR745
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MBR735
MBR745
V
RRM
V
RWM
V
R
35
45
V
Average Rectified Forward Current
(T
C
= 164°C) Per Device
I
F(AV)
7.5
A
Peak Repetitive Forward Current, (Square Wave, 20 kHz, T
C
= 168°C) I
FRM
7.5 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
I
RRM
1.0 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature (Note 1) T
J
−65 to +175 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Case
R
q
JC
3.0 °C/W
Maximum Thermal Resistance, Junction−to−Ambient
R
q
JA
60 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol
Min
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 7.5 Amps, T
J
= 125°C)
(i
F
= 15 Amps, T
J
= 125°C)
(i
F
= 15 Amps, T
J
= 25°C)
v
F
−
−
−
0.48
0.61
0.68
0.57
0.72
0.84
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
i
R
−
−
10
0.03
15
0.1
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
