Product Standards
Transistors with Built-in Resistor
DRC5114E0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
0.8 1.0 1.2
Input resistance R1
-30%
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
10 +30%
k
Resistance ratio R1/R2
V
0.8 V
-
V
Input voltage
Vi(on)
VCE = 0.2 V, IC = 5 mA
Vi(off)
VCE = 5 V, IC = 100 μA
2.1
Collector-emitter saturation voltage VCE(sat)
IC = 10 mA, IB = 0.5 mA 0.25
mA
Forward current transfer ratio hFE
VCE = 10 V, IC = 5 mA 35 -
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0 0.5
μA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0 0.5 μA
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0 0.1
V
Collector-emitter voltage (Base open) VCEO
IC = 2 mA, IB = 0 50 V
Collector-base voltage (Emitter open) VCBO
IC = 10 μA, IE = 0 50
+150 °C
Parameter Symbol Conditions
Storage temperature Tstg -55 to
Total power dissipation PT 150 mW
Junction temperature Tj 150 °C
VCEO 50 V
Collector current IC 100 mA
Unit: mm
Min Typ
Internal Connection
Resistance
value
Max
1of
R1
10
k
R2
10
k
3
Unit
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
DRC5114E0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA5114E
DRC2114E in SMini3 type package
Features
Packaging
SMini3-F2-B
JEITA SC-85
3. Collector
Marking Symbol:
NB
Code
1. Base
2.
Embossed type (Thermo-compression sealing) : 3 000
―
pcs / reel (standard)
Emitter
+85 °C
Unit
Panasonic
50 V
Parameter Symbol Rating
Operating ambient temperature Topr -40 to
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open)
C
B
R
1
R
2
E
2.1
2.0
0.9
1.25
1.3
(0.65)
0.130.3
12
3
(0.65)
