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SI7872DP-T1-E3

P1-P3P4-P6P7-P9P10-P10
www.vishay.com
4
Document Number: 72035
S-82116-Rev. C, 08-Sep-08
Vishay Siliconix
Si7872DP
MOSFET CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.
2
T
J
= 150 °C
20
10
0.1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
T
J
= 25 °C
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
- 50 - 25 0
2
5
5
0
7
5 100 125 150
I
D
= 250 μ A
Variance (V) V
GS(th)
T
J
- Temperature (°C)
0.4
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0246810
I
D
= 7.5 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
60
100
20
40
Power (W)
Time (s)
80
11010
-1
10
-2
10
-3
Safe Operating Area, Junction-to-Foot
100
1
0.1 1 10
100
0.01
10
- Drain Current (A)I
D
0.1
100 ms
1 s
10 s
DC
10 ms
1 ms
T
C
= 25 °C
Single Pulse
I
DM
Limited
I
D(on)
Limited
BV
DSS
Limited
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
Limited by R
DS(on)
*
Document Number: 72035
S-82116-Rev. C, 08-Sep-08
www.vishay.com
5
Vishay Siliconix
Si7872DP
MOSFET CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 600 10
-1
10
-4
100
2
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square W ave Pulse Duration (s)
Normalized Ef fective T ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 60 °C/W
3. T
JM
- T
A
= P
DM
Z
th J A
(t )
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
1
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
10
-1
110
-5
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square W ave Pulse Duration (s)
Normalized Ef fective T ransient
Thermal Impedance
10
-3
10
-4
2
1
www.vishay.com
6
Document Number: 72035
S-82116-Rev. C, 08-Sep-08
Vishay Siliconix
Si7872DP
MOSFET CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
5
10
15
20
25
30
0246810
V
GS
= 10 thru 4 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
3 V
- On-Resistance (Ω)R
DS(on)
0.000
0.008
0.016
0.024
0.032
0.040
0 5 10 15 20 25 30
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 4.5 V
0
2
4
6
8
10
0 5 10 15 20 25
V
DS
= 15 V
I
D
= 7.5 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
5
10
15
20
25
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
T
C
= 125 °C
- 55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
400
800
1200
1600
2000
0 5 10 15 20 25 30
V
DS
- Drain-to-Source Voltage (V)
C
rss
C - Capacitance (pF)
C
oss
C
iss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25
025507
5 100 125 150
V
GS
= 10 V
I
D
= 7.5 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
P1-P3P4-P6P7-P9P10-P10

SI7872DP-T1-E3

Mfr. #:
Buy SI7872DP-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 10A 0.022Ohm
Lifecycle:
New from this manufacturer.
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