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2STW1695

P1-P3P4-P6P7-P9
October 2008 Rev 4 1/9
9
2STW1695
High power PNP epitaxial planar bipolar transistor
Features
■ High breakdown voltage V
CEO
= -140 V
■ Complementary to 2STW4468
■ Typical f
t
= 20 MHz
■ Fully characterized at 125
o
C
Applications
■ Audio power amplifier
Description
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity
audio frequency amplifier output stage.
Figure 1. Internal schematic diagram
Table 1. Device summary
TO-247
1
2
3
Order code Marking Package Packaging
2STW1695 2STW1695 TO-247 Tube
ww w.st.com
Obsolete Product(s) - Obsolete Product(s)
Electrical ratings 2STW1695
2/9
1 Electrical ratings
Table 2. Absolute maximum rating
Table 3. Thermal data
Symbol Parameter Value Unit
V
CBO
Collector-base voltage (I
E
= 0) -140 V
V
CEO
Collector-emitter voltage (I
B
= 0) -140 V
V
EBO
Emitter-base voltage (I
C
= 0) -6 V
I
C
Collector current -10 A
I
CM
Collector peak current (t
P
< 5 ms) -20 A
P
tot
Total dissipation at T
c
= 25 °C 100 W
T
stg
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case ______max 1.25 °C/W
Obsolete Product(s) - Obsolete Product(s)
2STW1695 Electrical characteristics
3/9
2 Electrical characteristics
(T
case
= 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off current
(I
E
= 0)
V
CB
= -140 V -0.1 µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= -6 V -0.1 µA
V
(BR)CEO
Collector-emitter breakdown
voltage (I
B
= 0)
I
C
= -50 mA -140 V
V
(BR)CBO
Collector-base breakdown
voltage (I
E
= 0)
I
C
= -100 µA -140 V
V
(BR)EBO
(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
Emitter-base breakdown
voltage (I
C
= 0)
I
E
= -1 mA -6 V
V
CE(sat)
(1)
Collector-emitter saturation
voltage
I
C
= -5 A I
B
= -500 mA
I
C
= -7 A I
B
= -700 mA
-0.5
-0.7
V
V
V
BE
(1)
Base-emitter voltage V
CE
= -5 V I
C
= -5 A -1.3 V
h
FE
DC current gain
I
C
= -3 A V
CE
= -4 V
I
C
= -5 A V
CE
= -4 V
70
50
140
f
T
Transition frequency I
C
= -0.5 A V
CE
= -12 V 20 MHz
C
CBO
Collector-base capacitance
(I
E
= 0)
V
CB
= -10 V f = 1 MHz 225 pF
t
on
t
stg
t
f
Resistive load
Turn-on time
Storage time
Fall time
I
C
= -5 A V
CC
= -60 V
I
B1
= -I
B2
= -0.5 A
0.24
1.2
0.24
µs
µs
µs
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9

2STW1695

Mfr. #:
Buy 2STW1695
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT High Pwr PNP BiPolar Trans
Lifecycle:
New from this manufacturer.
Delivery:
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