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BSP52T1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 8
1 Publication Order Number:
BSP52T1/D
BSP52T1G, BSP52T3G
NPN Small-Signal
Darlington Transistor
This NPN small signal Darlington transistor is designed for use in
switching applications, such as print hammer, relay, solenoid and lamp
drivers. The device is housed in the SOT-223 package, which is
designed for medium power surface mount applications.
Features
• The SOT-223 Package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
• Available in 12 mm Tape and Reel
Use BSP52T1 to Order the 7 Inch/1000 Unit Reel
• PNP Complement is BSP62T1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating Symbol Max Unit
Collector-Emitter Voltage V
CES
80 V
Collector-Base Voltage V
CBO
90 V
Emitter-Base Voltage V
EBO
5.0 V
Collector Current I
C
1.0 A
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
P
D
0.8
6.4
W
mW/°C
Total Power Dissipation (Note 2)
@ T
A
= 25°C
Derate above 25°C
P
D
1.25
10
W
mW/°C
Operating and Storage
Temperature Range
T
J
, T
stg
−65 to 150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance (Note 1)
Junction-to-Ambient
R
q
JA
156 °C/W
Thermal Resistance (Note 2)
Junction-to-Ambient
R
q
JA
100 °C/W
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
T
L
260
10
°C
Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum
recommended footprint.
2. Device mounted on a FR-4 glass epoxy printed circuit board using 1 cm
2
pad.
Device Package Shipping
†
ORDERING INFORMATION
MARKING DIAGRAM
SOT−223
CASE 318E
STYLE 1
3
2
1
COLLECTOR 2,4
BASE
1
EMITTER 3
4
AYW
AS3G
G
A = Assembly Location
Y = Year
W = Work Week
AS3 = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
MEDIUM POWER
NPN SILICON
SURFACE MOUNT
DARLINGTON TRANSISTOR
BSP52T1G SOT−223
(Pb−Free)
1000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
BSP52T3G SOT−223
(Pb−Free)
4000 / Tape & Reel
BSP52T1G, BSP52T3G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
(I
C
= 100 mA, I
E
= 0)
V
(BR)CBO
90 − −
V
Emitter-Base Breakdown Voltage
(I
E
= 10 mA, I
C
= 0)
V
(BR)EBO
5.0 − −
V
Collector-Emitter Cutoff Current
(V
CE
= 80 V, V
BE
= 0)
I
CES
− − 10
mA
Emitter-Base Cutoff Current
(V
EB
= 4.0 V, I
C
= 0)
I
EBO
− − 10
mA
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= 150 mA, V
CE
= 10 V)
(I
C
= 500 mA, V
CE
= 10 V)
h
FE
1000
2000
−
−
−
−
−
Collector-Emitter Saturation Voltage
(I
C
= 500 mA, I
B
= 0.5 mA)
V
CE(sat)
− − 1.3
V
Base-Emitter Saturation Voltage
(I
C
= 500 mA, I
B
= 0.5 mA)
V
BE(sat)
− − 1.9
V
SWITCHING CHARACTERISTICS
Rise Time
(V
CC
= 10 V, I
C
= 150 mA, I
B1
= 0.15 mA)
t
r
− 155 −
ns
Delay Time
(V
CC
= 10 V, I
C
= 150 mA, I
B1
= 0.15 mA)
t
d
− 205 −
ns
Storage Time
(V
CC
= 10 V, I
C
= 150 mA, I
B1
= 0.15 mA, I
B2
= 0.15 mA)
t
s
− 420 −
ns
Fall Time
(V
CC
= 10 V, I
C
= 150 mA, I
B1
= 0.15 mA, I
B2
= 0.15 mA)
t
f
− 365 −
ns
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
BSP52T1G, BSP52T3G
http://onsemi.com
3
TYPICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
C, CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (V)
0.1 1 10
1
10
100
V
BE(on)
, BASE−EMITTER ON VOLTAGE (V)
I
C
, COLLECTOR CURRENT (mA)
0
V
CE
= 10 V
0.2
0.4
0.6
0.8
1.0
1.2
V
BE(sat)
, BASE−EMITTER SATURATION
VOLTAGE (V)
I
C
, COLLECTOR CURRENT (mA)
0
0.01
T
J
= −55°C
IC/IB = 1000
0.1 10000
0.4
0.8
1.2
1.6
2.0
2.4
T
J
= 25°C
T
J
= 150°C
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
0
0.01
1000000
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage
Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter ON Voltage
Figure 5. Capacitance
V
CE
= 10 V
T
J
= 150°C
T
J
= −55°C
IC/IB = 1000
10000
1000
100
0.01 0.1 1 100 10000
T
J
= 25°C
T
J
= −55°C
0.1 1 10
0.5
1.0
1.5
2.0
3.0
3.5
T
J
= 25°C
T
J
= 150°C
1
100
C
IBO
C
OBO
100000
10 1000
2.5
100010010 0.01
T
J
= −55°C
0.1 10000
T
J
= 25°C
T
J
= 150°C
1 100010010
1.4
1.6
1.8
2.0
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
I
C
, COLLECTOR CURRENT (mA)
50
70
90
110
130
150
170
Figure 6. Current Gain Bandwidth Product vs.
Collector Current
T
J
= 25°C
100010010
190
210
230
250
V
CE
= 2 V
P1-P3P4-P4

BSP52T1G

Mfr. #:
Buy BSP52T1G
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 1A 80V Bipolar Power NPN
Lifecycle:
New from this manufacturer.
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