MDD172-08N1

© 2000 IXYS All rights reserved
1 - 3
I
FRMS
= 2x 300 A
I
FAVM
= 2x 190 A
V
RRM
= 800-1800 V
Dimensions in mm (1 mm = 0.0394")
Symbol Test Conditions Characteristic Values
I
R
T
VJ
= T
VJM
; V
R
= V
RRM
20 mA
V
F
I
F
= 300 A; T
VJ
= 25°C 1.15 V
V
T0
For power-loss calculations only 0.8 V
r
T
T
VJ
= T
VJM
0.8 mW
Q
S
T
VJ
= 125°C; I
F
= 300 A, -di/dt = 50 A/ms 550 mC
I
RM
235 A
R
thJC
per diode; DC current 0.21 K/W
per module other values 0.105 K/W
R
thJK
per diode; DC current see Fig. 6/7 0.31 K/W
per module 0.155 K/W
d
S
Creepage distance on surface 12.7 mm
d
A
Strike distance through air 9.6 mm
a Maximum allowable acceleration 50 m/s
2
V
RSM
V
RRM
Type
VV
900 800 MDD 172-08N1
1300 1200 MDD 172-12N1
1500 1400 MDD 172-14N1
1700 1600 MDD 172-16N1
1900 1800 MDD 172-18N1
Symbol Test Conditions Maximum Ratings
I
FRMS
T
VJ
= T
VJM
300 A
I
FAVM
T
C
= 100°C; 180° sine 190 A
I
FSM
T
VJ
= 45°C; t = 10 ms (50 Hz), sine 6600 A
V
R
= 0 t = 8.3 ms (60 Hz), sine 7290 A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 5600 A
V
R
= 0 t = 8.3 ms (60 Hz), sine 6200 A
òi
2
dt T
VJ
= 45°C t = 10 ms (50 Hz), sine 218 000 A
2
s
V
R
= 0 t = 8.3 ms (60 Hz), sine 221 000 A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 157 000 A
2
s
V
R
= 0 t = 8.3 ms (60 Hz), sine 160 000 A
2
s
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz, RMS t = 1 min 3000 V~
I
ISOL
£ 1 mA t = 1 s 3600 V~
M
d
Mounting torque (M6) 2.25-2.75/20-25 Nm/lb.in.
Terminal connection torque (M6) 4.5-5.5/40-48 Nm/lb.in.
Weight Typical including screws 120 g
Features
International standard package
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
MDD 172
High Power
Diode Modules
312
3
1
2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
2 - 3
MDD 172
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
Fig. 2 òi
2
dt versus time (1-10 ms) Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
© 2000 IXYS All rights reserved
3 - 3
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 6 Transient thermal impedance
junction to case (per diode)
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
R
thJK
for various conduction angles d:
d R
thJK
(K/W)
DC 0.31
180° 0.323
120° 0.333
60° 0.360
30° 0.395
Constants for Z
thJK
calculation:
iR
thi
(K/W) t
i
(s)
1 0.0087 0.001
2 0.0163 0.065
3 0.185 0.4
4 0.1 1.29
MDD 172
R
thJC
for various conduction angles d:
d R
thJC
(K/W)
DC 0.210
180° 0.223
120° 0.233
60° 0.260
30° 0.295
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.0087 0.001
2 0.0163 0.065
3 0.185 0.4

MDD172-08N1

Mfr. #:
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 172 Amps 800V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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