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TPC8.2AHM3_A/H

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 0
1 Publication Order Number:
NSB12AN/D
NSB12ANT3G
600 Watt Peak Power Zener
Transient Voltage
Suppressor
Unidirectional
The NSB12ANT3G is designed to protect voltage sensitive
components from high voltage, high energy transients. This device has
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The NSB12ANT3G is ideally
suited for use in computer hard disk drives, communication systems,
automotive, numerical controls, process controls, medical equipment,
business machines, power supplies, and many other industrial/
consumer applications.
Specification Features:
•Working Peak Reverse Voltage Range - 12 V
•Peak Power - 600 Watts @ 1 ms at Maximum Clamp Voltage @
Peak Pulse Current
•ESD Rating of Class 3 (> 16 kV) per Human Body Model
•ESD Rating IEC 61000-4-2 Level 4 (> 30 kV)
•Low Leakage < 5 mA at 12 V
•UL 497B for Isolated Loop Circuit Protection
•Response Time is Typically < 1 ns
•Pb-Free Package is Available
Mechanical Characteristics:
CASE:
Void‐free, transfer‐molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Modified L-Bend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS
Please See the Table on the Following Page
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
600 WATT PEAK POWER
Device Package Shipping
†
ORDERING INFORMATION
SMB
CASE 403A
PLASTIC
Cathode Anode
A = Assembly Location
Y = Year
WW = Work Week
LEK = Specific Device Code
G = Pb-Free Package
MARKING DIAGRAM
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NSB12ANT3G SMB
(Pb-Free)
2500/Tape & Reel
(Note: Microdot may be in either location)
AYWW
LEKG
G
NSB12ANT3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1) @ T
L
= 25°C, Pulse Width = 1 ms P
PK
600 W
DC Power Dissipation @ T
L
= 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction to Lead
P
D
R
q
JL
3.0
40
25
W
mW/°C
°C/W
DC Power Dissipation (Note 3) @ T
A
= 25°C
Derate Above 25°C
Thermal Resistance from Junction to Ambient
P
D
R
q
JA
0.55
4.4
226
W
mW/°C
°C/W
Operating and Storage Temperature Range T
J
, T
stg
-65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non-repetitive at maximum I
PPM
and V
CM
, see electrical characteristics.
2. 1″ square copper pad, FR-4 board
3. FR-4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
Uni-Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Conditions Symbol Min Typ Max Unit
Zener Voltage (Note 5) IT = 1 mA V
BR
13.2 13.75 14.3 V
Reverse Leakage Current V
RWM
= 12 V I
R
5.0
mA
Clamping Voltage I
PPM
= 30.2 A
(Per Figure 1, Note 6)
V
CM
19.9 V
Forward Peak Voltage I
F
= 30 A
(Note 4)
V
F
3.5 V
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, non-repetitive duty cycle.
5. VZ measured at pulse test IT at an ambient temperature of 25°C.
6. Absolute Maximum Peak Current, I
PPM
.
NSB12ANT3G
http://onsemi.com
3
TYPICAL PROTECTION CIRCUIT
V
in
V
L
Z
in
LOAD
01 2 34
0
50
100
t, TIME (ms)
VALUE (%)
HALF VALUE -
I
PP
2
PEAK VALUE - I
PP
t
r
≤ 10 ms
Figure 1. 10 × 1000 ms Pulse Waveform
Figure 2. Pulse Derating Curve
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T
A
= 25 C°
100
80
60
40
20
0
0 25 50 75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
120
140
160
t
P
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
P1-P3P4-P6

TPC8.2AHM3_A/H

Mfr. #:
Buy TPC8.2AHM3_A/H
Manufacturer:
Vishay Semiconductors
Description:
TVS Diodes / ESD Suppressors 1500W Uni-Dir TO-277 AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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