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BAS16XV2T1

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 8
1 Publication Order Number:
BAS16XV2T1/D
BAS16XV2
Switching Diode
Features
• High−Speed Switching Applications
• Lead Finish: 100% Matte Sn (Tin)
• Qualified Reflow Temperature: 260°C
• Extremely Small SOD−523 Package
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
100 V
Continuous Forward Current I
F
200 mA
Peak Forward Surge Current I
FM(surge)
500 mA
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
I
FRM
500 mA
Non−Repetitive Peak Forward Current
(Square Wave, T
J
= 25°C prior to surge)
t = 1 ms
t = 1 ms
t = 1 s
I
FSM
4.0
1.0
0.5
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation, (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
200
1.57
mW
mW/°C
Thermal Resistance, Junction−to−Ambient R
θ
JA
635 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to 150 °C
1. FR-5 Minimum Pad.
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1
CATHODE
2
ANODE
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SOD−523
CASE 502
A6 = Specific Device Code
M = Date Code
G = Pb−Free Package
MARKING
DIAGRAM
1
2
A6 MG
G
12
BAS16XV2T1G SOD−523
(Pb−Free)
3000 / Tape & Ree
l
BAS16XV2T5G SOD−523
(Pb−Free)
8000 / Tape & Ree
l
(Note: Microdot may be in either location)
SBAS16XV2T1G SOD−523
(Pb−Free)
3000 /T ape & Ree
l
BAS16XV2
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2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 100 V)
(V
R
= 75 V, T
J
= 150°C)
(V
R
= 25 V, T
J
= 150°C)
I
R
−
−
−
1.0
50
30
mA
Reverse Breakdown Voltage
(I
BR
= 100 mA)
V
(BR)
100 − V
Forward Voltage
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 50 mA)
(I
F
= 150 mA)
V
F
−
−
−
−
715
855
1000
1250
mV
Diode Capacitance (V
R
= 0, f = 1.0 MHz) C
D
− 2.0 pF
Forward Recovery Voltage
(I
F
= 10 mA, t
r
= 20 ns)
V
FR
− 1.75 V
Reverse Recovery Time
(I
F
= I
R
= 10 mA, R
L
= 50 Ω)
t
rr
− 6.0 ns
Stored Charge
(I
F
= 10mA to V
R
= 5.0V, R
L
= 500 Ω)
Q
S
− 45 pC
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820 Ω
0.1 μF
D.U.T.
V
R
100 μH
0.1 μF
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAS16XV2
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3
100
0.2 0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0
1.2
10
1.0
0.1
T
A
= 85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40
50
0.68
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
C
D
, DIODE CAPACITANCE (pF)
2468
I
F
, FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
T
A
= -40°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
I
R
, REVERSE CURRENT (μA)
P1-P3P4-P4

BAS16XV2T1

Mfr. #:
Buy BAS16XV2T1
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching 75V 200mA
Lifecycle:
New from this manufacturer.
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