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VND810SPTR-E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
1/20October 2004
VND810SP-E
DOUBLE CHANNEL HIGH SIDE DRIVER
Rev. 1
Table 1. General Features
(*) Per each channel
■
CMOS COMPATIBLE INPUTS
■ OPEN DRAIN STATUS OUTPUTS
■ ON STATE OPEN LOAD DETECTION
■ OFF STATE OPEN LOAD DETECTION
■ SHORTED LOAD PROTECTION
■ UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
■ PROTECTION AGAINST LOSS OF GROUND
■ VERY LOW STAND-BY CURRENT
■ REVERSE BATTERY PROTECTION (**)
■ IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
DESCRIPTION
The VND810SP-E is a monolithic device made by
using STMicroelectronics VIPower M0-3
Technology, intended for driving any kind of load
with one side connected to ground.
Active V
CC
pin voltage clamp protects the device
against low energy spikes (see ISO7637 transient
compatibility table).
Figure 1. Package
Active current limitation combined with thermal
shutdown and automatic restart protects the
device against overload. The device detects open
load condition both in on and off state. Output
shorted to V
CC
is detected in the off state. Device
automatically turns off in case of ground pin
disconnection.
Table 2. Order Codes
Note: (**) See application schematic at page 9
Type R
DS(on)
I
out
V
CC
VND810SP-E 160 m
Ω (*) 3.5 A (*) 36 V
1
10
PowerSO-10™
Package Tube Tape and Reel
PowerSO-10™
VND810SP-E VND810SPTR-E
VND810SP-E
2/20
Figure 2. Block Diagram
Table 3. Absolute Maximum Ratings
Symbol Parameter Value Unit
V
CC
DC Supply Voltage 41 V
- V
CC
Reverse DC Supply Voltage - 0.3 V
- I
GND
DC Reverse Ground Pin Current - 200 mA
I
OUT
DC Output Current Internally Limited A
- I
OUT
Reverse DC Output Current - 6 A
I
IN
DC Input Current +/- 10 mA
I
stat
DC Status Current +/- 10 mA
V
ESD
Electrostatic Discharge (Human Body Model:
R=1.5KΩ; C=100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
4000
4000
5000
5000
V
V
V
V
E
MAX
Maximum Switching Energy
(L=1.4mH; R
L
=0Ω; V
bat
=13.5V; T
jstart
=150ºC;
I
L
=5A)
24 mJ
P
tot
Power Dissipation T
C
=25°C 52 W
T
j
Junction Operating Temperature Internally Limited °C
T
c
Case Operating Temperature - 40 to 150 °C
T
stg
Storage Temperature - 55 to 150 °C
OVERTEMP. 1
V
cc
GND
INPUT1
OUTPUT1
OVERVOLTAGE
LOGIC
DRIVER 1
STATUS1
V
cc
CLAMP
UNDERVOLTAGE
CLAMP 1
OPENLOAD ON 1
CURRENT LIMITER 1
OPENLOAD OFF 1
OUTPUT2
DRIVER 2
CLAMP 2
OPENLOAD ON 2
OPENLOAD OFF 2
OVERTEMP. 2
INPUT2
STATUS2
CURRENT LIMITER 2
3/20
VND810SP-E
Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins
Figure 4. Current and Voltage Conventions
Table 4. Thermal Data
Note: 1. When mounted on a standard single-sided FR-4 board with 0.5 cm
2
of Cu (at least 35µm thick). Horizontal mounting and no artificial
air flow.
Note: 2. When mounted on a standard single-sided FR-4 board with 6 cm
2
of Cu (at least 35µm thick). Horizontal mounting and no artificial
air flow
Symbol Parameter Value Unit
R
thj-case
Thermal Resistance Junction-case 2.4 °C/W
R
thj-amb
Thermal Resistance Junction-ambient 52.4
(1)
37
(2)
°C/W
Connection / Pin Status N.C. Output Input
Floating X X X X
To Ground X Through 10KΩ resistor
1
2
3
4
5
6
7
8
9
10
11
OUTPUT 1
OUTPUT 1
N.C.
OUTPUT 2
OUTPUT 2
GROUND
INPUT 1
STATUS 1
STATUS 2
INPUT 2
V
CC
I
S
I
GND
OUTPUT 2
V
CC
GND
STATUS 2
INPUT 2
I
OUT2
I
IN2
I
STAT2
V
STAT2
V
IN2
V
CC
V
OUT2
OUTPUT 1
I
OUT1
V
OUT1
INPUT 1
I
IN1
STATUS 1
I
STAT1
V
IN1
V
STAT1
V
F1
(*)
(*) V
Fn
= V
CCn
- V
OUTn
during reverse battery condition
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

VND810SPTR-E

Mfr. #:
Buy VND810SPTR-E
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Double Ch High Side
Lifecycle:
New from this manufacturer.
Delivery:
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