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VS-409CNQ150PBF

P1-P3P4-P4
VS-409CNQ...PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 26-Mar-14
1
Document Number: 94207
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 400 A
FEATURES
• 175 °C T
J
operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• UL approved file E222165
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-409CNQ... center tap Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in high current switching power supplies,
plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
PRODUCT SUMMARY
I
F(AV)
400 A
V
R
135 V, 150 V
Package TO-244
Circuit Two diodes common cathode
Base common
cathode
Lug
terminal
anode 1
Lug
terminal
anode 2
TO-244
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 400 A
V
RRM
Range 135/150 V
I
FSM
t
p
= 5 μs sine 20 000 A
V
F
200 A
pk
, T
J
= 125 °C (per leg) 0.75 V
T
J
Range -55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-409CNQ135PbF VS-409CNQ150PbF UNITS
Maximum DC reverse voltage V
R
135 150 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward
current (fig. 5)
per leg
I
F(AV)
50 % duty cycle at T
C
= 129 °C, rectangular waveform
200
A
per device 400
Maximum peak one cycle non-repetitive
surge current per leg (fig. 7)
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
20 000
10 ms sine or 6 ms rect. pulse 2300
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 5.5 A, L = 1 mH 15 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1A
VS-409CNQ...PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 26-Mar-14
2
Document Number: 94207
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
200 A
T
J
= 25 °C
1.13
V
400 A 1.46
200 A
T
J
= 125 °C
0.75
400 A 0.89
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
6
mA
T
J
= 125 °C 85
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 6000 pF
Typical series inductance per leg L
S
From top of terminal hole to mounting plane 5.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range T
J
, T
Stg
-55 - 175 °C
Thermal resistance, junction to case per leg
R
thJC
- - 0.19
°C/WThermal resistance, junction to case per module - - 0.095
Thermal resistance, case to heatsink R
thCS
-0.10-
Weight
-68- g
-2.4-oz.
Mounting torque 35.4 (4) 53.1 (6)
lbf in
(N m)
Mounting torque center hole 30 (3.4) 40 (4.6)
Terminal torque 30 (3.4) - 44.2 (5)
Vertical pull - - 80
lbf in
2" lever pull - - 35
1
10
100
1000
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
1.5 2.0 2.500.5
T
J
= 175 °C
T
J
= 25 °C
1.0
T
J
= 125 °C
1
10
100
0.1
0.01
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
6030 90 120
150
0
1000
0.001
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
VS-409CNQ...PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 26-Mar-14
3
Document Number: 94207
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
60 90 120030
10 000
1000
100
T
J
= 25 °C
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
80
100
120
140
160
180
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
10050 150 200
250 300
0
DC
See note (1)
Square wave (D = 0.50)
80 % rated V
r
applied
0
50
100
250
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
10050 150 200 250 300
0
150
200
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
P1-P3P4-P4

VS-409CNQ150PBF

Mfr. #:
Buy VS-409CNQ150PBF
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 400 Amp 150 Volt Common Cathode
Lifecycle:
New from this manufacturer.
Delivery:
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