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NVMFD5485NLT3G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 3
1 Publication Order Number:
NVMFD5485NL/D
NVMFD5485NL
Power MOSFET
60 V, 44 mW, 20 A, Dual N−Channel
Features
• Small Footprint (5x6 mm) for Compact Designs
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• 175°C Operating Temperature
• NVMFD5485NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• This is a Pb−Free Device
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 V
Gate−to−Source Voltage V
GS
"20 V
Continuous Drain
Current R
JC
(Notes 1, 2, 4)
Steady
State
T
C
= 25°C
I
D
19.5
A
T
C
= 100°C 13.8
Power Dissipation
R
JC
(Notes 1, 2)
T
C
= 25°C
P
D
38.5
W
T
C
= 100°C 19.2
Continuous Drain
Current R
JA
(Notes 1, 3 & 4)
Steady
State
T
A
= 25°C
I
D
5.3
A
T
A
= 100°C 3.8
Power Dissipation
R
JA
(Notes 1 & 3)
T
A
= 25°C
P
D
2.9
W
T
A
= 100°C 1.4
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 s
I
DM
113 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
175
°C
Source Current (Body Diode) I
S
37 A
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L(pk)
= 25 A, L = 0.1 mH, R
G
= 25 )
E
AS
31 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Note 2)
R
JC
3.9
°C/W
Junction−to−Ambient − Steady State (Note 3)
R
JA
52
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted to an ideal (infinite) heat sink.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second are higher but are dependent
on pulse duration and duty cycle.
ORDERING INFORMATION
www.onsemi.com
Device Package Shipping
†
V
(BR)DSS
R
DS(on)
MAX I
D
MAX
60 V
44 m @ 10 V
20 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DFN8 5x6
(SO8FL)
CASE 506BT
MARKING DIAGRAM
60 m @ 4.5 V
NVMFD5485NLT1G DFN8
(Pb−Free)
1500/
Tape & Ree
l
NVMFD5485NLT3G DFN8
(Pb−Free)
5000/
Tape & Ree
l
Dual N−Channel
D1
S1
G1
1
D2
S2
G2
XXXXXX = 5485NL
XXXXXX = (NVMFD5485NL) or
XXXXXX = 5485LW
XXXXXX = (NVMFD5485NLWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
D1
D1
D2
D2
S1
G1
S2
G2
XXXXXX
AYWZZ
D2
D1
D2
D1
NVMFD5485NLWFT1G DFN8
(Pb−Free)
1500/
Tape & Ree
l
NVMFD5485NLWFT3G DFN8
(Pb−Free)
5000/
Tape & Ree
l
NVMFD5485NL
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
Reference to 25°C
I
D
= 250 A
67 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C
1.0
A
T
J
= 125°C
10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.5 2.5 V
Threshold Temperature Coefficient V
GS(TH)
/T
J
Reference to 25°C
I
D
= 250 A
−4.86 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 15 A
33 44
m
V
GS
= 4.5 V, I
D
= 10 A
42 60
CHARGES AND CAPACITANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 25 V
560
pF
Output Capacitance C
oss
126
Reverse Transfer Capacitance C
rss
58
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 48 V,
I
D
= 10 A
20
nC
Threshold Gate Charge Q
G(TH)
0.52
Gate−to−Source Charge Q
GS
1.9
Gate−to−Drain Charge Q
GD
7.9
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 48 V,
I
D
= 10 A
11.5 nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
d(on)
V
GS
= 4.5 V, V
DS
= 48 V,
I
D
= 10 A, R
G
= 2.5
9.5
ns
Rise Time t
r
26.6
Turn−Off Delay Time t
d(off)
27.8
Fall Time t
f
23.7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 15 A
T
J
= 25°C
0.93 1.2
V
T
J
= 125°C
0.83
Reverse Recovery Time t
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/s,
I
S
= 10 A
28.9
ns
Charge Time t
a
23.2
Discharge Time t
b
5.6
Reverse Recovery Charge Q
RR
35.5 nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25°C
0.93
nH
Drain Inductance L
D
0.005
Gate Inductance L
G
1.84
Gate Resistance R
G
12
5. Pulse Test: pulse width = 300 s, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NVMFD5485NL
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
543210
0
5
10
15
20
25
30
54321
0
5
10
15
20
30
Figure 3. On−Resistance vs. V
GS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
10987652
0.02
0.03
0.06
0.08
1814106302
0
0.02
0.03
0.06
0.07
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0
0.2
0.4
0.6
0.8
1.6
1.8
2.4
555040302520105
1.0E−12
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (m)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (A)
V
GS
= 10 to 6.5 V
4.5 V
4.1 V
3.9 V
3.7 V
3.5 V
3.3 V
3.1 V
2.9 V
2.7 V
V
DS
= 10 V
T
J
= 125°C
T
J
= −55°C
T
J
= 25°C
0.04
0.05
0.07
I
D
= 10 A
T
J
= 25°C
2622
0.01
0.04
0.05
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 10 V
175
1.4
I
D
= 10 A
V
GS
= 10 V
T
J
= 125°C
T
J
= 150°C
T
J
= 25°C
15 35 45 60
1.0E−11
1.0E−10
1.0E−09
1.0E−08
1.0E−07
1.0E−06
1.0E−05
1.0E−04
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (m)
5.5 V
25
43
150
2.0
1.2
2.2
1.0
P1-P3P4-P6

NVMFD5485NLT3G

Mfr. #:
Buy NVMFD5485NLT3G
Manufacturer:
ON Semiconductor
Description:
MOSFET Pwr MOSFET 60V 20A 44mOhm Dual N-CH
Lifecycle:
New from this manufacturer.
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