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BFG93A/X,215
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
NXP
Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
400
300
100
0
200
MBG245
150
P
tot
(mW)
T
s
(
o
C)
Fig.3
DC current gain as a function of collector
current; typical values.
V
CE
=5V
.
handbook, halfpage
01
0
2
0
3
0
120
0
40
80
MCD087
h
FE
I (mA)
C
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
I
C
=i
c
= 0; f = 1 MHz.
handbook, halfpage
04
8
1
6
1.0
0
MCD088
12
0.8
0.6
0.4
0.2
C
re
(pF)
V (V)
CB
Fig.5
Transition frequency as a function of
collector current; typical values.
V
CE
= 5 V; T
amb
=2
5
°
C; f = 500 MHz.
handbook, halfpage
01
0
2
0
4
0
8
6
2
0
4
MCD089
30
I (mA)
C
(GHz)
T
f
Rev. 05 - 26 November 2007
4 of 13
NXP
Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
Fig.6
Gain as a function of collector current;
typical values.
V
CE
= 8 V; f = 500 MHz.
handbook, halfpage
0
30
20
10
0
10
20
40
MCD090
30
gain
(dB)
I (mA)
C
MSG
G
UM
Fig.7
Gain as a function of collector current;
typical values.
V
CE
= 8 V; f = 1 GHz.
handbook, halfpage
0
30
20
10
0
10
20
40
MCD091
30
gain
(dB)
I (mA)
C
MSG
G
UM
Fig.8
Gain as a function of frequency; typical
values.
V
CE
= 8 V; I
C
= 10 mA.
handbook, halfpage
50
0
10
MCD092
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f
(MHz)
MSG
G
UM
G
max
Fig.9
Gain as a function of frequency; typical
values.
V
CE
= 8 V; I
C
=3
0m
A
.
handbook, halfpage
50
0
10
MCD093
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G
UM
MSG
G
max
Rev. 05 - 26 November 2007
5 of 13
NXP
Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
Fig.10
Minimum noise figure as a function of
collector current; typical values.
V
CE
=8V
.
handbook, halfpage
4
2
1
0
MCD094
10
1
3
F
(dB)
I (mA)
C
f = 2 GHz
500 MHz
1 GHz
10
2
Fig.11
Minimum noise figure as a function of
frequency; typical values.
V
CE
=8V
.
handbook, halfpage
4
2
1
0
MCD095
3
F
(dB)
f (MHz)
5 mA
10 mA
10
4
10
3
10
2
I = 30 mA
C
Fig.12 Common emitter noise figure circles; typical values.
handbook, full pagewidth
0.5
1
2
5
10
∞
0.2
0.5
1
2
5
10
MCD096
stability
circle
*
unstable
region
+ j
– j
22.2 dB
MSG
0.2
1
25
1
0
0.5
0.2
OPT
F = 1.4 dB
min
2 dB
4 dB
3 dB
Z
o
=5
0
Ω
.
Maximum stable gain = 22.2 dB.
Rev. 05 - 26 November 2007
6 of 13
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
BFG93A/X,215
Mfr. #:
Buy BFG93A/X,215
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors Single NPN 12V 35mA 300mW 40 6GHz
Lifecycle:
New from this manufacturer.
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