TSM9N90ECZ C0G Datasheet TSM9N90ECI C0G, TSM9N90ECZ C0G | P1-P3

TSM9N90E

Taiwan Semiconductor

Document Number: DS_P0000159 1 Version: B15

N-Channel Power MOSFET

900V, 9.0A, 1.4Ω

FEATURES

● 100% Avalanche Tested

● G-S ESD Protection Diode Embedded

● Pb-free plating

● Compliant to RoHS Directive 2011/65/EU and in

accordance to WEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

definition

APPLICATION

● Power Supply

● Lighting

KEY PERFORMANCE PARAMETERS

PARAMETER

VALUE

UNIT

V

DS

900

V

R

DS(on)

(max)

1.4

Ω

Q

g

72

nC

TO-220

ITO-220

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

TO-220

ITO-220

UNIT

Drain-Source Voltage

V

DS

900

V

Gate-Source Voltage

V

GS

±30

V

Continuous Drain Current

(Note 1)

T

C

= 25°C

I

D

9.0

A

T

C

= 100°C

5.7

Pulsed Drain Current

(Note 2)

I

DM

36

A

Total Power Dissipation @ T

C

= 25°C

P

DTOT

290

89

W

Single Pulsed Avalanche Energy

(Note 3)

E

AS

454

mJ

Single Pulsed Avalanche Current

(Note 3)

I

AS

9

A

Operating Junction and Storage Temperature Range

T

J

, T

STG

- 55 to +150

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

TO-220

ITO-220

UNIT

Junction to Case Thermal Resistance

R

ӨJC

0.43

1.4

°C/W

Junction to Ambient Thermal Resistance

R

ӨJA

62.5

°C/W

Notes: R

ӨJA

is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined

at the solder mounting surface of the drain pins. R

ӨJA

is guaranteed by design while R

ӨCA

is determined by the user’s board

design. R

ӨJA

shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air.

TSM9N90E

Taiwan Semiconductor

Document Number: DS_P0000159 2 Version: B15

ELECTRICAL SPECIFICATIONS (T

A

= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Static

(Note 4)

Drain-Source Breakdown Voltage

V

GS

= 0V, I

D

= 250µA

BV

DSS

900

--

V

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= 250µA

V

GS(TH)

2.0

--

4.0

V

Gate Body Leakage

V

GS

= ±30V, V

DS

= 0V

I

GSS

--

±100

µA

Zero Gate Voltage Drain Current

V

DS

= 900V, V

GS

= 0V

I

DSS

--

10

µA

Drain-Source On-State Resistance

V

GS

= 10V, I

D

= 4.5A

R

DS(on)

--

1.13

1.4

Ω

Dynamic

(Note 5)

Total Gate Charge

V

DS

= 720V, I

D

= 9.0A,

V

GS

= 10V

Q

g

--

72

--

nC

Gate-Source Charge

Q

gs

--

11

--

Gate-Drain Charge

Q

gd

--

31

--

Input Capacitance

V

DS

= 25V, V

GS

= 0V,

f = 1.0MHz

C

iss

--

2470

--

pF

Output Capacitance

C

oss

--

192

--

Reverse Transfer Capacitance

C

rss

--

27

--

Switching

(Note 6)

Turn-On Delay Time

V

DD

= 450V,

R

GEN

= 25Ω,

I

D

= 9.0A, V

GS

= 10V,

t

d(on)

--

52

--

ns

Turn-On Rise Time

t

r

--

97

--

Turn-Off Delay Time

t

d(off)

--

212

--

Turn-Off Fall Time

t

f

--

159

--

Source-Drain Diode

(Note 4)

Forward On Voltage

I

S

= 9.0A, V

GS

= 0V

V

SD

--

1.5

V

Reverse Recovery Time

V

GS

= 0V, I

S

= 9A,

dI

F

/dt = 100A/us

t

fr

--

570

--

ns

Reverse Recovery Charge

Q

fr

--

6.6

--

μC

Notes:

1. Current limited by package

2. Pulse width limited by the maximum junction temperature

3. L = 10.6mH, I

AS

= 9A, V

DD

= 50V, R

G

= 25Ω, Starting T

J

= 25

o

C

100% Eas Test Condition: L = 10.6mH, I

AS

= 4.5A, V

DD

= 50V, R

G

= 25Ω, Starting T

J

= 25

o

C

4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%

5. For DESIGN AID ONLY, not subject to production testing.

6. Switching time is essentially independent of operating temperature.

TSM9N90E

Taiwan Semiconductor

Document Number: DS_P0000159 3 Version: B15

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSM9N90ECZ C0G

TO-220

50pcs / Tube

TSM9N90ECI C0G

ITO-220

50pcs / Tube

TSM9N90ECZ C0G

TSM9N90ECZ C0G

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