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BZW06-273B A0G

P1-P3P4-P6
CREAT BY ART
- Excellent clamping capability
- Low dynamic impedance
- 600W surge capability at 10 / 1000 μs waveform
- Typical I
R
less than 1μA above 10V
- Halogen-free according to IEC 61249-2-21
Molding compound: UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
SYMBOL
P
PK
R
θJL
T
J
T
STG
PART NO.
PART NO.
Version: J1602
AEC-Q101 qualified
Green compound
BZW06-20HA0G BZW06-20 H A0 G
1,000 / Bulk packing
Note 1: "xxx" defines voltage from 12.8V (BZW06-13) to 376V (BZW06-376)
EXAMPLE
EXAMPLE
PART NO.
PART NO.
SUFFIX
PACKING CODE
PACING CODE
SUFFIX
DESCRIPTION
BZW06-xxx
(Note 1)
H
A0
G
DO-15 1,500 / Ammo box
R0 DO-15 3,500 / 13" Paper reel
B0 DO-15
DO-204AC (DO-15)
MECHANICAL DATA
ORDERING INFORMATION
PART NO.
SUFFIX
PACKING CODE
PACING CODE
SUFFIX
PACKAGE PACKING
Case: DO-204AC (DO-15)
Weight: 0.4g (approximately)
BZW06 SERIES
Taiwan Semiconductor
600W, 13V - 376V Transient Volta
g
e Su
pp
ressor
FEATURES
- Fast response time: Typically less than
1.0ps from 0 volt to V
BR
for unidirectional
and 5.0ns for bidirectional
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER VALUE UNIT
Peak power dissipation at T
A
=25°C, Tp=1ms (Note 1)
600 W
°C
Steady state power dissipation at T
L
=75°C
lead lengths .375", 9.5mm
P
D
1.7 W
- 55 to +175 °C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
100
Storage temperature range
60
100
Operating junction temperature range
°C/W
Note 1: Non-repetitive current pulse, per fig. 3
Junction to leads
Junction to ambient on printed circuit
L lead=10mm
R
θJA
- 55 to +175
(T
A
=25°C unless otherwise noted)
Version: J1602
BZW06 SERIES
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES
0
20
40
60
80
100
120
0 20 40 60 80 100 120 140 160 180 200
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
) A
DERATING IN PERCENTAGE (%)
T
A
, AMBIENT TEMPERATURE (
o
C)
FIG.2 PULSE DERATING CURVE
1
10
100
1000
0 1 10 100 1000
V
CL
, CLAMPING VOLTAGE(V)
Ipp, PEAK PULSE CURRENT(A)
FIG. 4 CLAMPING VOLTAGE CURVE
tp=20μs
tp=1ms
tp=10ms
BWZ06-376
BWZ06-188
BWZ06-58
BWZ06-33
BWZ06-19
BWZ06-10
BWZ06-5V8
0
20
40
60
80
100
120
140
00.511.522.533.54
PEAK PULSE CURRENT (%)
t, TIME ms
FIG. 3 CLAMPING POWER PULSE WAVEFORM
td
Peak Value
I
PPM
tr=10μs
Half value-I
PPM
/2
10/1000μs, waveform
as defined by R.E.A.
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
10
100
1000
10000
100000
0.001 0.01 0.1 1 10 100
P
PPM
, PEAK PULSE POWER, W
tp, PULSE WIDTH, (ms)
FIG. 1 PEAK PULSE POWER RATING CURVE
Non-repetitive
pulse waveform
shown in fig.3
10
100
1000
10000
1 10 100 1000
CJ, JUNCTION CAPACITANCE (pF) A
V(
BR
), BREAKDOWN VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
BZW06-13
BZW06-58
BZW06-171
CREAT BY ART
Version: J1602
BZW06 SERIES
Taiwan Semiconductor
10
100
1000
10000
1 10 100 1000
CJ, JUNCTION CAPACITANCE (pF) A
V(
BR
), BREAKDOWN VOLTAGE (V)
FIG. 6 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
BZW06-13B
BZW06-58B
BZW06-171B
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
INSTANTANEOUS FORWARD
CURRENT(A)
FORWARD VOLTAGE(V)
FIG.7 TYPICAL FORWARD CHARACTERISTICS
UNDIRECTIONAL TYPE
25°C
150°C
0.1
1
10
100
1000
10000
0 25 50 75 100 125 150
I
R
(T
J
) / I
R
(T
J
=25
o
C)
T
J
(°C)
FIG. 9 RELATIVE VARIATION OF LEAKAGE CURRENT
vs JUNCTION TEMPERATURE
VR=VRM
1
10
100
0.01 0.1 1 10 100 1000
TRANSIENT THERMAL
IMPEDANCE(°C/W)
T, PULSE DURATION (s)
FIG. 8 TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
P1-P3P4-P6

BZW06-273B A0G

Mfr. #:
Buy BZW06-273B A0G
Manufacturer:
Taiwan Semiconductor
Description:
TVS DIODE 273V 564V DO204AC
Lifecycle:
New from this manufacturer.
Delivery:
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