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Document Number: 72322
S09-0130-Rev. B, 02-Feb-09
Vishay Siliconix
Si2318DS
Notes:
a. Pulse test; PW ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits
Unit Min. Typ. Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 µA
40
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
13
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 32 V, V
GS
= 0 V
0.5
µA
V
DS
= 32 V, V
GS
= 0 V, T
J
= 55 °C
10
On-State Drain Current
a
I
D(on)
V
DS
≥ 4.5 V, V
GS
= 10 V
6A
Drain-Source On-Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 3.9 A
0.036 0.045
Ω
V
GS
= 4.5 V, I
D
= 3.5 A
0.045 0.058
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 3.9 A
11 S
Diode Forward Voltage
V
SD
I
S
= 1.25 A, V
GS
= 0 V
0.8 1.2 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 20 V, V
GS
= 10 V, I
D
= 3.9 A
10 15
nCGate-Source Charge
Q
gs
1.6
Gate-Drain Charge
Q
gd
2.1
Gate Resistance
R
g
1.8 Ω
Input Capacitance
C
iss
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
540
pFOutput Capacitance
C
oss
80
Reverse Transfer Capacitance
C
rss
45
Switching
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 20 V, R
L
= 20 Ω
I
D
≅ 1.0 A, V
GEN
= 10 V, R
G
= 6 Ω
510
ns
Rise Time
t
r
12 20
Turn-Off Delay Time
t
d(off)
20 30
Fall Time
t
f
15 25
Output Characteristics
0
4
8
12
16
20
0246810
V
GS
= 10 V thru 5 V
4 V
V - Drain-to-Source Voltage (V)
DS
- Drain Current (A)I
D
3 V
1 V, 2 V
Transfer Characteristics
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
T
C
= 125 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
- 55 °C
