ZXMD63N03X
Document number: DS33501 Rev. 2 - 2
4 of 8
www.diodes.com
March 2014
© Diodes Incorporated
ZXMD63N03
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
30 — — V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1.0 µA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — 100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS
th
1.0 — — V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance (Note 11)
R
DS (ON)
—
— 135
mΩ
V
GS
= 10V, I
D
= 1.7A
— 200
V
GS
= 4.5V, I
D
= 0.85A
Forward Transconductance (Notes 11 & 13)
g
fs
1.9 — — S
V
DS
= 10V, I
D
= 0.85A
Diodes Forward Voltage (Note 11)
V
SD
— — 0.95 V
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 12 & 13)
C
iss
— 290 —
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance (Notes 12 & 13)
C
oss
— 70 —
Reverse Transfer Capacitance (Notes 12 & 13)
C
rss
— 20 —
Total Gate Charge (Notes 12 & 13)
Q
— — 8
nC
V
GS
= 10V, V
DS
= 24V,
I
D
= 1.7A
Gate-Source Charge (Notes 12 & 13)
Q
s
— — 1.2
Gate-Drain Charge (Notes 12 & 13)
Q
d
— — 2
Reverse Recovery Time (Note 13)
t
r
— 16.9 — ns
T
J
= +25°C, I
F
= 1.7A,
di/dt = 100A/µs
Reverse Recovery Charge (Note 13)
Q
r
— 9.5 — nC
Turn-On Delay Time (Notes 12 & 13)
t
D
on
— 2.5 —
ns
V
DD
= 15V, I
D
= 1.7A,
R
G
= 6.1, R
D
= 8.7,
Turn-On Rise Time (Notes 12 & 13)
t
— 4.1 —
Turn-Off Delay Time (Notes 12 & 13)
t
D
off
— 9.6 —
Turn-Off Fall Time (Notes 12 & 13)
t
f
— 4.4 —
Notes: 11. Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
12. Switching characteristics are independent of operating junction temperature.
13. For design aid only, not subject to production testing.
