NSI45025ZT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Steady State Current @ Vak = 7.5 V (Note 1) I
reg(SS)
21.25 25 28.75 mA
Voltage Overhead (Note 2) V
overhead
1.8 V
Pulse Current @ Vak = 7.5 V (Note 3) I
reg(P)
22 26 30 mA
Capacitance @ Vak = 7.5 V (Note 4) C 2.6 pF
Capacitance @ Vak = 0 V (Note 4) C 6.9 pF
1. I
reg(SS)
steady state is the voltage (Vak) applied for a time duration ≥ 10 sec, using FR−4 @ 300 mm
2
2 oz. Copper traces, in still air.
2. V
overhead
= V
in
− V
LEDs
. V
overhead
is typical value for 75% I
reg(SS)
.
3. I
reg(P)
non−repetitive pulse test. Pulse width t ≤ 300 msec.
4. f = 1 MHz, 0.02 V RMS.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 5) T
A
= 25°C
Derate above 25°C
P
D
954
7.6
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 5)
R
θ
JA
131 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 5)
R
ψ
JL4
40.8 °C/W
Total Device Dissipation (Note 6) T
A
= 25°C
Derate above 25°C
P
D
1074
8.6
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 6)
R
θ
JA
116 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 6)
R
ψ
JL4
39.9 °C/W
Total Device Dissipation (Note 7) T
A
= 25°C
Derate above 25°C
P
D
1150
9.2
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 7)
R
θ
JA
109 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 7)
R
ψ
JL4
42 °C/W
Total Device Dissipation (Note 8) T
A
= 25°C
Derate above 25°C
P
D
1300
10.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 8)
R
θ
JA
96 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 8)
R
ψ
JL4
39.4 °C/W
Total Device Dissipation (Note 9) T
A
= 25°C
Derate above 25°C
P
D
1214
9.7
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 9)
R
θ
JA
103 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 9)
R
ψ
JL4
40.2 °C/W
Total Device Dissipation (Note 10) T
A
= 25°C
Derate above 25°C
P
D
1389
11.1
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 10)
R
θ
JA
90 °C/W
Thermal Reference, Junction−to−Lead 4 (Note 10)
R
ψ
JL4
37.7 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
5. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
6. FR−4 @ 100 mm
2
, 2 oz. copper traces, still air.
7. FR−4 @ 300 mm
2
, 1 oz. copper traces, still air.
8. FR−4 @ 300 mm
2
, 2 oz. copper traces, still air.
9. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
10.FR−4 @ 500 mm
2
, 2 oz. copper traces, still air.
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
