IXTA05N100HV Datasheet IXTA05N100, IXTP05N100, IXTA05N100HV | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25C to 150C 1000 V

V

DGR

T

J

= 25C to 150C, R

GS

= 1M 1000 V

V

GSS

Continuous 30 V

V

GSM

Transient 40 V

I

D25

T

C

= 25C 750 mA

I

DM

T

C

= 25C, Pulse Width Limited by T

JM

3A

I

A

T

C

= 25C1A

E

AS

T

C

= 25C 100 mJ

dv/dt I

S

 I

DM

, V

DD

 V

DSS

, T

J

150C 3 V/ns

P

D

T

C

= 25C40W

T

J

-55 ... +150 C

T

JM

150 C

T

stg

-55 ... +150 C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in

Weight TO-220 3.0 g

TO-263 2.5 g

TO-263HV 2.5 g

DS98736F(5/14)

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 250A 1000 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250A 2.5 4.5 V

I

GSS

V

GS

=  30V, V

DS

= 0V 100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 25 A

T

J

= 125C 500A

R

DS(on)

V

GS

= 10V, I

D

= 375mA, Note 1 17 

High Voltage

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTA05N100HV

IXTA05N100

IXTP05N100

V

DSS

= 1000V

I

D25

= 750mA

R

DS(on)



 17





Features



High Voltage Package (TO-263HV)



Fast Switching Times



Avalanche Rated



R

ds(on)

HDMOS

TM

Process



Rugged Polysilicon Gate Cell structure



Extended FBSOA

Advantages



High Power Density



Space Savings

Applications



Switch-Mode and Resonant-Mode

Power Supplies



Flyback Inverters



DC Choppers

G = Gate D = Drain

S = Source Tab = Drain

G

D

S

TO-220AB (IXTP)

D (Tab)

TO-263HV (IXTA)

G

S

D (Tab)

TO-263 AA (IXTA)

G

S

D (Tab)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA05N100HV IXTA05N100

IXTP05N100

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse test, t  300s, duty cycle, d  2%.

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 20V, I

D

= 500mA, Note 1 0.55 0.93 S

C

iss

260 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 22 pF

C

rss

8 pF

t

d(on)

11 ns

t

r

19 ns

t

d(off)

40 ns

t

f

28 ns

Q

g(on)

7.8 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 1A 1.4 nC

Q

gd

4.1 nC

R

thJC

3.1 C/W

R

thCS

(TO-220) 0.50 C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 750 mA

I

SM

Repetitive, Pulse Width Limited by T

JM

3 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.5 V

t

rr

710 ns

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 1A

R

G

= 47 (External)

I

F

= I

S

, -di/dt = 100A/s

V

R

= 100V, V

GS

= 0V

Pins: 1 - Gate 2 - Drain

3 - Source

TO-220AB Outline

TO-263AA Outline

TO-263HV Outline

PIN: 1 - Gate

2 - Source

3 - Drain

PIN: 1 - Gate

2,4 - Source

3 - Drain

IXTA05N100HV IXTA05N100

IXTP05N100

Fig. 1. Output Characteristics @ T

J

= 25ºC

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

5.5V

5V

Fig. 2. Output Characteristics @ T

J

= 125ºC

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

5V

4.5V

5.5V

Fig. 3. R

DS(on)

Normalized to I

D

= 375mA Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 750mA

I

D

= 375mA

Fig. 4. R

DS(on)

Normalized to I

D

= 375mA Value vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

0.00.20.40.60.81.01.21.41.6

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Input Admittance

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 5. Maximum Drain Current vs.

Case Temperature

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXTA05N100HV

IXTA05N100HV

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