PI3B16244
3.3V, 16-Bit, 4-Port NanoSwitch™
2
PS8170D 10/01/04
DC Electrical Characteristics (Over the Operating Range, T
A
= –40°C to +85°C, V
CC
= 3.0V to 3.6V)
Capacitance (T
A
= 25°C, f = 1 MHz)
Storage Temperature ...................................................... –65°C to +150°C
Ambient Temperature with Power Applied ...................... –40°C to +85°C
Supply Voltage Range ....................................................... –0.5V to +4.6V
DC Input Voltage ............................................................... –0.5V to +4.6V
DC Output Current ........................................................................120 mA
Power Dissipation ............................................................................. 0.5W
Note:
Stresses greater than those listed under MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Maximum Ratings
(Above which useful life may be impaired. For user guidelines, not tested.)
Notes:
1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 3.3V, T
A
= 25°C ambient and maximum loading.
3. Measured by the voltage drop between A and B pin at indicated current through the switch. On-Resistance is determined by the lower of the
voltages on the two (A,B) pins.
4. This parameter is determined by device characterization but is not production tested.
sretemaraPnoitpircseDsnoitidnoCtseT
)1(
.niM.pyT
)2(
.xaMstinU
V
HI
egatloVHGIHtupnIleveLHGIHcigoLdeetnarauG0.2V
V
LI
egatloVWOLtupnIleveLWOLcigoLdeetnarauG5.0–8.0
I
HI
tnerruCHGIHtupnIV
CC
V,.xaM=
NI
V=
CC
1±
Aµ
I
LI
tnerruCWOLtupnIV
CC
V,.xaM=
NI
DNG=1±
I
HZO
tnerruCtuptuOecnadepmIhgiH0≤ B,A ≤ V
CC
1±
V
KI
egatloVedoiDpmalCV
CC
I,.niM=
NI
Am81–=7.0–2.1–V
R
NO
ecnatsiseRNOhctiwS
)3(
V
CC
V,.niM=
NI
I,V0.0=
NO
Am84=58
Ω
V
CC
V,.niM=
NI
I,V4.2=
NO
Am51=0151
sretemaraP
)4(
noitpircseDsnoitidnoCtseT.pyTstinU
C
NI
ecnaticapaCtupnI
V
NI
V0=
0.3
FpC
FFO
ffOhctiwS,ecnaticapaCB/A5.8
C
NO
nOhctiwS,ecnaticapaCB/A0.71