© Semiconductor Components Industries, LLC, 2008
August, 2008 − Rev. 0
1 Publication Order Number:
NTUD3171PZ/D
NTUD3171PZ
Small Signal MOSFET
−20 V, −200 mA, Dual P−Channel,
1.0 x 1.0 mm SOT−963 Package
Features
• Dual P−Channel MOSFET
• Offers a Low R
DS(on)
Solution in the Ultra Small 1.0 x 1.0 mm
Package
• 1.5 V Gate Voltage Rating
• Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics.
• This is a Pb−Free Device
Applications
• High Side Switch
• High Speed Interfacing
• Optimized for Power Management in Ultra Portable Equipment
MAXIMUM RATINGS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage V
GS
±8 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
−200
mA
T
A
= 85°C −140
t v 5 s
T
A
= 25°C −250
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
−125
mW
t v 5 s
−200
Pulsed Drain Current
t
p
= 10 ms
I
DM
−600 mA
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
−200 mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
http://onsemi.com
PINOUT: SOT−963
P−Channel
MOSFET
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
V
(BR)DSS
R
DS(ON)
MAX I
D
Max
−20 V
5.0 W @ −4.5 V
6.0 W @ −2.5 V
−0.2 A
7.0 W @ −1.8 V
10 W @ −1.5 V
MARKING
DIAGRAM
4 = Specific Device Code
M = Date Code
G = Pb−Free Package
SOT−963
CASE 527AD
4 M G
1
D1
S1
G1
D2
S2
G2
Top View
D
1
G
2
S
2
S
1
G
1
6
5
4
1
2
3
D
2