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D44H11G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 13
1 Publication Order Number:
D44H/D
D44H Series (NPN),
D45HSeries (PNP)
Complementary Silicon
Power Transistors
These series of plastic, silicon NPN and PNP power transistors can
be used as general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.
Features
• Low Collector−Emitter Saturation Voltage
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
D44H8, D45H8
D44H11, D45H11
V
CEO
60
80
Vdc
Emitter Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous I
C
10 Adc
Collector Current − Peak (Note 1) I
CM
20 Adc
Total Power Dissipation
@ T
C
= 25°C
@ T
A
= 25°C
P
D
70
2.0
W
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Width ≤ 6.0 ms, Duty Cycle ≤ 50%.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.8 °C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
62.5 °C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
T
L
275 °C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
TO−220
CASE 221A
STYLE 1
3
4
1
10 AMP COMPLEMENTARY
SILICON POWER
TRANSISTORS 60, 80 VOLTS
2
MARKING
DIAGRAM
D4xHyyG
AYWW
www.onsemi.com
D45H8G TO−220
(Pb−Free)
50 Units/Rail
ORDERING INFORMATION
D4xHyy = Device Code
x = 4 or 5
yy = 8 or 11
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
D45H11G TO−220
(Pb−Free)
50 Units/Rail
D44H11G TO−220
(Pb−Free)
50 Units/Rail
D44H8G TO−220
(Pb−Free)
50 Units/Rail
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP
NPN
D44H Series (NPN), D45H Series (PNP)
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage D44H8, D45H8
(I
C
= 30 mAdc, I
B
= 0 Adc) D44H11, D45H11
V
CEO(sus)
60
80
−
−
−
−
Vdc
Collector Cutoff Current (V
CE
= Rated V
CEO
, V
BE
= 0) I
CES
− − 10
mA
Emitter Cutoff Current (V
EB
= 5.0 Vdc) I
EBO
− − 10
mA
ON CHARACTERISTICS
DC Current Gain
(V
CE
= 1.0 Vdc, I
C
= 2.0 Adc)
(V
CE
= 1.0 Vdc, I
C
= 4.0 Adc)
h
FE
60
40
−
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.4 Adc)
V
CE(sat)
− − 1.0
Vdc
Base−Emitter Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.8 Adc)
V
BE(sat)
− − 1.5 Vdc
DYNAMIC CHARACTERISTICS
Collector Capacitance
(V
CB
= 10 Vdc, f
test
= 1.0 MHz) D44H Series
D45H Series
C
cb
−
−
90
160
−
−
pF
Gain Bandwidth Product
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 20 MHz) D44H Series
D45H Series
f
T
−
−
50
40
−
−
MHz
SWITCHING TIMES
Delay and Rise Times
(I
C
= 5.0 Adc, I
B1
= 0.5 Adc) D44H Series
D45H Series
t
d
+ t
r
−
−
300
135
−
−
ns
Storage Time
(I
C
= 5.0 Adc, I
B1
= I
B2
= 0.5 Adc) D44H Series
D45H Series
t
s
−
−
500
500
−
−
ns
Fall Time
(I
C
= 5.0 Adc, I
B1
= 102 = 0.5 Adc) D44H Series
D45H Series
t
f
−
−
140
100
−
−
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
D44H Series (NPN), D45H Series (PNP)
www.onsemi.com
3
Figure 1. D44H11 DC Current Gain Figure 2. D45H11 DC Current Gain
I
C
, COLLECTOR CURRENT (AMPS) I
C
, COLLECTOR CURRENT (AMPS)
1010.10.01
10
100
1000
1010.10.01
10
100
1000
h
FE
, DC CURRENT GAIN
V
CE
= 1 V
125°C
h
FE
, DC CURRENT GAIN
Figure 3. D44H11 DC Current Gain Figure 4. D45H11 DC Current Gain
I
C
, COLLECTOR CURRENT (AMPS) I
C
, COLLECTOR CURRENT (AMPS)
1010.10.01
10
100
1000
1010.10.01
10
100
1000
h
FE
, DC CURRENT GAIN
V
CE
= 5 V
h
FE
, DC CURRENT GAIN
Figure 5. D44H11 ON−Voltage Figure 6. D45H11 ON−Voltage
I
C
, COLLECTOR CURRENT (AMPS) I
C
, COLLECTOR CURRENT (AMPS)
1010.1
0
0.05
0.40
1010.1
0
0.1
0.3
0.6
SATURATION VOLTAGE (VOLTS)
V
CE(sat)
@ I
C
/I
B
= 10
SATURATION VOLTAGE (VOLTS)
−40°C
25°C
V
CE
= 1 V
125°C
−40°C
25°C
125°C
−40°C
25°C
V
CE
= 5 V
125°C
−40°C
25°C
125°C
−40°C
25°C
0.10
0.15
0.20
0.25
0.30
0.35
0.2
0.5
0.4
V
CE(sat)
@ I
C
/I
B
= 10
125°C
−40°C
25°C
P1-P3P4-P5

D44H11G

Mfr. #:
Buy D44H11G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 10A 80V 50W NPN
Lifecycle:
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