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NTMFS4933NT3G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2012
May, 2017 − Rev. 9
1 Publication Order Number:
NTMFS4933N/D
NTMFS4933N
Power MOSFET
30 V, 210 A, Single N−Channel, SO−8 FL
Features
• Low R
DS(on)
to Improve Conduction and Overall Efficiency
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• OR−ing FET, Power Load Switch, Motor Control
• Refer to Application Note AND8195/D for Mounting Information
End Products
• Server, UPS, Fault−Tolerant Power Systems, Hot Swap
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1
)
Steady
State
T
A
= 25°C
I
D
34
A
T
A
= 100°C 21.5
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
2.74 W
Continuous Drain
Current R
q
JA
≤ 10 s
(Note 1)
T
A
= 25°C
I
D
43
A
T
A
= 100°C 27
Power Dissipation
R
q
JA
≤ 10 s (Note 1)
T
A
= 25°C P
D
7.3 W
Continuous Drain
Current R
q
JA
(Note 2
)
T
A
= 25°C
I
D
20
A
T
A
= 100°C 12.5
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
1.06 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
210
A
T
C
=100°C 132
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
104 W
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
400 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
95 A
Drain to Source DV/DT dV/d
t
4.4 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 24 V, V
GS
= 10 V,
I
L
= 58 A
pk
, L = 0.3 mH, R
G
= 25 W)
E
AS
504 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
(Cu area = 50 mm
2
[1 oz])
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
www.onsemi.com
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
4933N
AYWZZ
1
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
1.2 mW @ 10 V
210 A
2.0 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4933NT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4933NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
NTMFS4933N
www.onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
1.1
°C/W
Junction−to−Ambient – Steady State (Note 3)
R
q
JA
45.6
Junction−to−Ambient – Steady State (Note 4)
R
q
JA
117.5
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
R
q
JA
17.13
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size. (Cu area = 50 mm
2
[1 oz])
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
15
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C 1.0
mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.2 1.6 2.2 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
4.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V
I
D
= 30 A 0.9 1.2
mW
I
D
= 15 A 0.9
V
GS
= 4.5 V
I
D
= 30 A 1.5 2.0
I
D
= 15 A 1.5
Forward Transconductance g
FS
V
DS
= 1.5 V, I
D
= 15 A 82 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
10930
pF
Output Capacitance C
OSS
3230
Reverse Transfer Capacitance C
RSS
92
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
62.1
nC
Threshold Gate Charge Q
G(TH)
15.7
Gate−to−Source Charge Q
GS
27
Gate−to−Drain Charge Q
GD
10.1
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V; I
D
= 30 A 148 nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
31
ns
Rise Time t
r
33
Turn−Off Delay Time t
d(OFF)
47
Fall Time t
f
23
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTMFS4933N
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
d(ON)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
20
ns
Rise Time t
r
26
Turn−Off Delay Time t
d(OFF)
88.6
Fall Time t
f
22
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C 0.82 1.1
V
T
J
= 125°C 0.68
Reverse Recovery Time t
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
73.5
ns
Charge Time t
a
35.9
Discharge Time t
b
37.6
Reverse Recovery Charge Q
RR
117 nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25°C
0.50 nH
Drain Inductance L
D
0.005 nH
Gate Inductance L
G
1.84 nH
Gate Resistance R
G
1.1 2.2
W
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
P1-P3P4-P6P7-P7

NTMFS4933NT3G

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Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8FL 30V 232A 1.5MO
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