PS8802-1,-2
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
50
30
20
10
0
40
25 50 75 100
Ambient Temperature T
A (˚C)
Diode Power Dissipation PD (mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
100
60
20
0
80
40
25 50 75 100
Ambient Temperature T
A (˚C)
Transistor Power Dissipation PC (mW)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100
0.01
0.1
10
1
1.4 1.8 2.0 2.41.0 1.2 1.6 2.2
Forward Voltage V
F (V)
Forward Current IF (mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
TA = +100˚C
+50˚C
+25˚C
0˚C
–25˚C
80
20
0
40
60
70
50
10
30
0.5 5 10 501
V
CC = 4.5 V,
V
O = 0.4 V
Forward Current IF (mA)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
Current Transfer Ratio CTR (
%
)
1.6
0.0
1.2
0.4
1.4
1.0
0.8
0.6
0.2
0 50 100–50 –25 25
75
Ambient Temperature T
A (˚C)
Normalized Current Transfer Raio CTR
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Normalized to 1.0
at T
A = 25˚C, IF = 16 mA,
V
CC = 4.5 V, VO = 0.4 V
Ambient Temperature T
A (˚C)
High Level Output Current IOH (nA)
HIGH LEVEL OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
10 000
10
0.1
1 000
100
50 100–25 0 25 75
VCC = VO = 30 V
V
CC = VO = 5.5 V
1
I
F = 0 mA
Remark The graphs indicate nominal characteristics.
Data Sheet PN10418EJ07V0DS
8