FDP8443 N-Channel PowerTrench
®
MOSFET
FDP8443 Rev. A www.fairchildsemi.com2
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 40 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current Continuous (T
C
< 144
o
C, V
GS
= 10V) 80
AContinuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θJA
= 62
o
C/W) 20
Pulsed See Figure 4
E
AS
Single Pulse Avalanche Energy (Note 1) 531 mJ
P
D
Power Dissipation 188 W
Derate above 25
o
C1.25W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to +175
o
C
R
θJC
Thermal Resistance Junction to Case 0.8
o
C/W
R
θJA
Thermal Resistance Junction to Ambient (Note 2) 62
o
C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP8443 FDP8443 TO-220AB Tube N/A 50 units
Electrical Characteristics T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
B
VDSS
Drain to Source Breakdown Voltage I
D
= 250μA, V
GS
= 0V 40 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 32V, - - 1
μA
V
GS
= 0V T
C
= 150
o
C - - 250
I
GSS
Gate to Source Leakage Current V
GS
= ±20V - - ±100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250μA22.84V
r
DS(on)
Drain to Source On Resistance
I
D
= 80A, V
GS
= 10V - 2.7 3.5
mΩ
I
D
= 80A, V
GS
= 10V,
T
J
= 175
o
C
-4.76.1
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
- 9310 - pF
C
oss
Output Capacitance - 800 - pF
C
rss
Reverse Transfer Capacitance - 510 - pF
R
G
Gate Resistance V
GS
= 0.5V, f = 1MHz - 0.9 - Ω
Q
g(TOT)
Total Gate Charge at 10V V
GS
= 0 to 10V
V
DD
= 20V
I
D
= 35A
I
g
= 1mA
- 142 185 nC
Q
g(TH)
Threshold Gate Charge V
GS
= 0 to 2V - 17.5 23 nC
Q
gs
Gate to Source Gate Charge
-36-nC
Q
gs2
Gate Charge Threshold to Plateau - 18.8 - nC
Q
gd
Gate to Drain “Miller“ Charge - 32 - nC
