PMEG1020EH_EJ_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 15 January 2010 3 of 9
NXP Semiconductors
PMEG1020EH; PMEG1020EJ
10 V, 2 A ultra low V
F
MEGA Schottky barrier rectifiers
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating are available on request.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[4] Soldering point of cathode tab.
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 6. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
to ambient
in free air
PMEG1020EH
[1][2]
- - 330 K/W
[2][3]
- - 150 K/W
PMEG1020EJ
[1][2]
- - 350 K/W
[2][3]
- - 150 K/W
R
th(j-sp)
thermal resistance from junction
to solder point
[4]
PMEG1020EH - - 60 K/W
PMEG1020EJ - - 55 K/W
Table 8. Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
=0.01A
[1]
- 100 130 mV
I
F
=0.1A
[1]
- 170 200 mV
I
F
=1A
[1]
- 280 350 mV
I
F
=2A
[1]
- 350 460 mV
I
R
reverse current V
R
=5V - 0.7 2 mA
V
R
=8V - 1 2.5 mA
V
R
=10V - 1.2 3 mA
C
d
diode capacitance V
R
=5V; f=1MHz - 40 50 pF
