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AT-30511-BLKG

P1-P3P4-P6P7-P9P10-P11
Agilent AT-30511, AT-30533
Low Current, High Performance
NPN Silicon Bipolar Transistors
Data Sheet
Description
Agilent’s AT-30511 and AT-30533
are high performance NPN bipolar
transistors that have been
optimized for maximum f
T
at low
voltage operation, making them
ideal for use in battery powered
applications in wireless markets.
The AT-30533 uses the 3 lead
SOT-23, while the AT-30511 places
the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a multi-
plicity of tasks. The 5 emitter finger
interdigitated geometry yields an
extremely fast transistor with high
gain and low operating currents.
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 13 dB or more
associated gain at a 2.7 V, 1 mA
bias. Voltage breakdowns are high
enough for use at 5 volts. High
gain capability at 1 V, 1 mA makes
these devices a good fit for
900 MHz pager applications.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Agilent’s 10 GHz f
T
,
30 GHz f
MAX
Self-Aligned-
Transistor (SAT) process. The die
are nitride passivated for surface
protection. Excellent device
uniformity, performance and
reliability are produced by the use
of ion-implantation, self-alignment
techniques, and gold metalization
in the fabrication of these devices.
Outline Drawing
BASE EMITTER
EMITTER COLLECTO
R
BASE EMITTER
COLLECTOR
305
305
SOT-23 (AT-30533)
SOT-143 (AT-30511)
Features
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
AT-30511: 1.1 dB NF, 16 dB G
A
AT-30533: 1.1 dB NF, 13 dB G
A
• Characterized for End-Of-
Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-And-Reel Packaging
Option Available
• Lead-free Option Available
2
AT-30511, AT-30533 Absolute Maximum Ratings
Symbol Parameter Units Absolute Maximum
[1]
V
EBO
Emitter-Base Voltage V 1.5
V
CBO
Collector-Base Voltage V 11
V
CEO
Collector-Emitter Voltage V 5.5
I
C
Collector Current mA 8
P
T
Power Dissipation
[2] [3]
mW 100
T
j
Junction Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
Notes:
1. Operation of this device above any one of these parameters may cause permanent
damage.
2. T
Mounting Surface
= 25°C.
3. Derate at 1.82 mW/°C for T
C
> 95°C.
Thermal Resistance
[2]
:
θ
jc
= 550°C/W
Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a
Compromise Match Between Best Noise Figure, Best Gain, Stability, a Practical,
Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and
AT-310 Geometries.
1000 pF
V
BB
W = 10 L = 1860
W = 10 L = 1000
W = 30 L = 100
W = 30 L = 100
W = 10 L = 1860
1000 pF
V
CC
25 Ω
W = 10 L = 1025
TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2
NOT TO SCALE
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
DIMENSIONS IN MILS
Electrical Specifications, T
A
= 25°C
AT-30511 AT-30533
Symbol Parameters and Test Conditions Units Min Typ Max Min Typ Max
NF Noise Figure
V
CE
= 2.7 V, I
C
= 1 mA f = 0.9 GHz dB 1.1
[1]
1.4
[1]
1.1
[2]
1.4
[2]
G
A
Associated Gain
V
CE
= 2.7 V, I
C
= 1 mA f = 0.9 GHz dB 14
[1]
16
[1]
11
[2]
13
[2]
h
FE
Forward Current V
CE
= 2.7 V - 70 300 70 300
Transfer Ratio I
C
= 1 mA
I
CBO
Collector Cutoff Current V
CB
= 3 V µA 0.03 0.2 0.03 0.2
I
EBO
Emitter Cutoff Current V
EB
= 1 V µA 0.1 1.5 0.1 1.5
Notes:
1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.
2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.
3
AT-30511, AT-30533 Characterization Information, T
A
= 25°C
AT-30511 AT-30533
Symbol Parameters and Test Conditions Units Typ Typ
P
1dB
Power at 1 dB Gain Compression (opt tuning)
V
CE
= 2.7 V, I
C
= 5 mA f = 0.9 GHz dBm 7 7
G
1dB
Gain at 1 dB Gain Compression (opt tuning)
V
CE
= 2.7 V, I
C
= 5 mA f = 0.9 GHz dB 16.5 15
IP
3
Output Third Order Intercept Point,
V
CE
= 2.7 V, I
C
= 5 mA (opt tuning) f = 0.9 GHz dBm 17 17
|S
21
|
E
2
Gain in 50 Ω System; V
CE
= 2.7 V, I
C
= 1 mA f = 0.9 GHz dB 10 9
C
CB
Collector-Base Capacitance V
CB
= 3V, f = 1 MHz pF 0.04 0.04
P 1dB (dBm)
0
0
FREQUENCY (GHz)
1.0 1.5
10
4
2
0.5 2.5
6
2.0
8
5 mA
2 mA
G 1dB (dBm)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20
5 mA
2 mA
G 1dB (dBm)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20
5 mA
2 mA
Typical Performance
Note:
1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and
including circuit losses.
Figure 7. AT-30533 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 2.7 V.
Figure 6. AT-30511 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
= 2.7 V.
Figure 5. AT-30511 and AT-30533
Power at 1 dB Gain Compression vs.
Frequency and Current at V
CE
= 2.7 V.
Figure 4. AT-30533 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
CE
= 2.7 V.
Figure 3. AT-30511 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
CE
= 2.7 V.
Figure 2. AT-30511 and AT-30533
Minimum Noise Figure and Amplifier
NF
[1]
vs. Frequency and Current at
V
CE
= 2.7 V.
NOISE FIGURE (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
2.5
1.0
0.5
0.5 2.5
1.5
2.0
2.0
1 mA
5 mA
AMPLIFIER NF
NF MIN.
Ga (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20
5 mA
1 mA
Ga (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2
20
5 mA
1 mA
P1-P3P4-P6P7-P9P10-P11

AT-30511-BLKG

Mfr. #:
Buy AT-30511-BLKG
Manufacturer:
Broadcom / Avago
Description:
RF Bipolar Transistors Transistor Si Low Current
Lifecycle:
New from this manufacturer.
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