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NVMFS5113PLT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 3
1 Publication Order Number:
NVMFS5113PL/D
NVMFS5113PL
Power MOSFET
−60 V, 14 mW, −64 A, Single P−Channel
Features
• Low R
DS(on)
to Minimize Conduction Losses
• High Current Capability
• Avalanche Energy Specified
• NVMFS5113PLWF − Wettable Flanks Product
• NVM Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−60 V
Gate−to−Source Voltage V
GS
"20 V
Continuous Drain Cur-
rent R
q
JC
(Notes 1, 2, 3
)
Steady
State
T
C
= 25°C
I
D
−64
A
T
C
= 100°C −45
Power Dissipation R
q
JC
(Notes 1, 2)
T
C
= 25°C
P
D
150
W
T
C
= 100°C 75
Continuous Drain Cur-
rent R
q
JA
(Notes 1, 2, 3
)
Steady
State
T
A
= 25°C
I
D
−10
A
T
A
= 100°C −7
Power Dissipation R
q
JA
(Notes 1, 2)
T
A
= 25°C
P
D
3.8
W
T
A
= 100°C 1.9
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
−415 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
175
°C
Source Current (Body Diode) I
S
−150 A
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L(pk)
= 46 A, L = 0.3 mH, R
G
= 25 W)
E
AS
315 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State (Drain)
(Note 2)
R
q
JC
1.0 °C/W
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
39 °C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
−60 V
14 mW @ −10 V
R
DS(on)
−64 A
I
D
V
(BR)DSS
22 mW @ −4.5 V
www.onsemi.com
P−Channel
D (5, 6)
S (1, 2, 3)
G (4)
DFN5
CASE 488AA
STYLE 1
MARKING
DIAGRAM
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
XXXXXX
AYWZZ
S
S
S
G
D
D
D
D
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
ORDERING INFORMATION
1
NVMFS5113PL
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−60 V
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= −60 V
T
J
= 25°C −1.0 mA
T
J
= 125°C −100
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "20 V "100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−1.5 −2.5 V
Drain−to−Source On Resistance R
DS(on)
V
GS
= −10 V, I
D
= −17 A 10.5 14 mW
V
GS
= −4.5 V, I
D
= −5 A 16 22
Froward Transconductance g
FS
V
DS
= −15 V, I
D
= −15 A 43 S
CHARGES AND CAPACITANCES
Input Capacitance C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −25 V
4400
pF
Output Capacitance C
oss
505
Reverse Transfer Capacitance C
rss
319
Total Gate Charge Q
G(TOT)
V
DS
= −48 V,
I
D
= −17 A
V
GS
= −4.5 V 45
nC
V
GS
= −10 V 83
Threshold Gate Charge Q
G(TH)
V
GS
= −10 V, V
DS
= −48 V,
I
D
= −17 A
4
Gate−to−Source Charge Q
GS
13
Gate−to−Drain Charge Q
GD
27
Plateau Voltage V
GP
3.5 V
SWITCHING CHARACTERISTICS (Notes 4)
Turn−On Delay Time
t
d(on)
V
GS
= −10 V, V
DS
= −48 V,
I
D
= −17 A, R
G
= 2.5 W
15
ns
Rise Time t
r
37
Turn−Off Delay Time t
d(off)
54
Fall Time t
f
77
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= −17 A
T
J
= 25°C −0.79 −1.0
V
T
J
= 125°C −0.65
Reverse Recovery Time t
RR
V
GS
= 0 V, dl
s
/dt = 100 A/ms,
I
s
= −17 A
41
ns
Charge Time t
a
22
Discharge Time t
b
19
Reverse Recovery Charge Q
RR
50 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
NVMFS5113PL
www.onsemi.com
3
TYPICAL CHARACTERISTICS
100
1000
10000
100000
10 20 30 40 50 60
0.60
0.90
1.20
1.50
1.80
2.10
−50 −25 0 25 50 75 100 125 150 175
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
0 102030405060708090100
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0
100.0
110.0
120.0
123456
0.0
10.0
20.0
30.0
40.0
50.0
60.0
0.0 1.0 2.0 3.0 4.0 5.0
Figure 1. On−Region Characteristics
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−I
D
, DRAIN CURRENT (A)
−6 V to −10 V
−4.0 V
V
GS
= −2.8 V
V
DS
= −10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
Figure 2. Transfer Characteristics
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
−I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
I
D
= −17 A
T
J
= 25°C
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= −4.5 V
T
J
= 25°C
V
GS
= −10 V
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
V
GS
= −10 V
I
D
= −17 A
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−I
DSS
, LEAKAGE (nA)
T
J
= 125°C
T
J
= 150°C
V
GS
= 0 V
−3.6 V
−3.2 V
T
J
= 25°C
0.010
0.012
0.014
0.016
0.018
0.020
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
1.00
1.30
1.60
1.90
2.00
1.70
1.40
1.10
0.70
0.80
P1-P3P4-P6

NVMFS5113PLT1G

Mfr. #:
Buy NVMFS5113PLT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET SINGLE P-CHANNEL S08FL 60V 69A 1
Lifecycle:
New from this manufacturer.
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