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NTL4502NT1

P1-P3P4-P6
NTL4502N
http://onsemi.com
4
0
20
40
60
80
100
120
0246810
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
I
D
, DRAIN CURRENT (A)
0.004
0.008
0.012
0.016
0.02
0.024
0.028
10 20 30 40 50 60 70 80 90 100 110 120
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
Figure 3. On−Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (A)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
V
GS
= 10 V
0.004
0.008
0.012
0.016
0.02
0.024
0.028
10 20 30 40 50 60 70 80 90 100 110 12
0
T
J
= 25°C
T
J
= −55°C
T
J
= 150°C
T
J
= 125°C
V
GS
= 4.5 V
Figure 4. On−Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
−50 −25 0 25 50 75 100 125 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
10
100
1000
10000
0 5 10 15 20 25
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
T
J
= 100°C
T
J
= 150°C
T
J
= 125°C
0
20
40
60
01234
T
J
= −55°C
T
J
= 25°C
T
J
= 125°C
V
GS
= 4.5 V
V
GS
= 10 V
V
GS
= 4.0 V
V
GS
= 6.0 V
V
GS
= 5.5 V
V
GS
= 8.0 V
V
GS
= 5.0 V
V
GS
= 3.5 V
V
GS
= 3.0 V
V
GS
= 2.5 V
V
DS
w 10 V
I
D
= 30 A
V
GS
= 4.5 V and 10 V
NTL4502N
http://onsemi.com
5
0
400
800
1200
1600
2000
−10 −50 5 101520
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
C, CAPACITANCE (pF)
T
J
= 25°C
V
GS
= 0 V
C
iss
C
oss
C
rss
C
iss
V
DS
= 0 V
C
rss
V
GS
V
DS
0
1
2
3
4
5
04812
Q
g
, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and Drain−to−Source
Voltage versus Total Charge
V
GS
I
D
= 15 A
T
J
= 25°C
1
10
100
1000
1 10 100
R
G
, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
t, TIME (ns)
0
10
20
30
40
50
60
0 0.2 0.4 0.6 0.8 1
Figure 10. Diode Forward Voltage versus
Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (A)
T
J
= 25°C
T
J
= 150°C
t
r
t
d(off)
t
f
t
d(on)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1
10
100
0.1 1 10 100
R
DS(ON)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
100 ms
1 ms
10 ms
dc
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
I
D
, DRAIN CURRENT (A)
Figure 11. Maximum Rated Forward Biased Safe Operating Area
6
0
8
16
24
32
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
GS
Q
GD
Q
G(TOT)
V
DS
V
DS
= 12 V
I
D
= 15 A
V
GS
= 4.5 V
NTL4502N
http://onsemi.com
6
PACKAGE DIMENSIONS
PInPAK
CASE 495−01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. COPLANARITY APPLIES TO LEAD. DIE ATTACHED
PAD.
4. OPTIONAL FEATURES ARE FOR REFERENCE
ONLY.
M
0.10 (0.004) Y
−V−
−W−
A
B
0.20 (0.008)
Y
0.08 (0.003) Y
M
E
N
−Y−
0.08 (0.003)
Y
E
N
J 4 PL
R 0.38 (0.015) 6 PL
EXPOSED DIE
ATTACH PAD
K
P
D
4 PL
8 PL
D/2
V W
Y
M
0.05 (0.002)
L 12 PL
T
R
C
VIEW N−N
E/2
H 6 PL
F 3 PL
G
S
8 PL
4 PL
4 PL
DIM
A
MIN MAX MIN MAX
INCHES
10.40 10.60 0.409 0.417
MILLIMETERS
B 10.40 10.60 0.409 0.417
C 0.40 0.50 0.016 0.020
D 1.27 BSC 0.050 BSC
E 0.50 0.52 0.020 0.020
F 1.70 1.90 0.067 0.075
G 2.45 2.55 0.096 0.100
H 0.80 1.00 0.031 0.039
J 2.90 3.10 0.114 0.122
K 4.75 4.95 0.187 0.195
L 1.10 1.30 0.043 0.051
M 2.00 2.20 0.079 0.087
P 0.30 0.50 0.012 0.020
R 0.70 0.90 0.028 0.035
S 0.58 0.78 0.023 0.031
T 1.68 1.78 0.066 0.070
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NTL4502N/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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For additional information, please contact your local
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PInPAK is a registered trademark of Semiconductor Components Industries, LLC (SCILLC).
P1-P3P4-P6

NTL4502NT1

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Manufacturer:
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Description:
MOSFET 4N-CH 24V 11.4A 16PIN
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