SQM120P10_10M1LGE3 Datasheet SQM120P10_10M1LGE3 | P1-P3

SQM120P10-10m1L

www.vishay.com

Vishay Siliconix

S15-2463-Rev. A, 19-Oct-15

1

Document Number: 76943

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive P-Channel 100 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET

®

power MOSFET

• Package with low thermal resistance

• 100 % R

g

and UIS tested

• AEC-Q101 qualified

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c. When mounted on 1" square PCB (FR4 material).

PRODUCT SUMMARY

V

DS

(V) -100

R

DS(on)

(Ω) at V

GS

= -10 V 0.0101

R

DS(on)

(Ω) at V

GS

= -4.5 V 0.0150

I

D

(A) -120

Configuration Single

Package TO-263

S

G

D

P-Channel MOSFET

TO-263

Top View

G

D

S

G

D

S

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

-100

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current

a

T

C

= 25 °C

a

I

D

-120

A

T

C

= 125 °C -78

Continuous Source Current (Diode Conduction)

a

I

S

-120

Pulsed Drain Current

b

I

DM

-480

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

-78

Single Pulse Avalanche Energy E

AS

304 mJ

Maximum Power Dissipation

b

T

C

= 25 °C

P

D

375

W

T

C

= 125 °C 125

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mount

c

R

thJA

40

°C/W

Junction-to-Case (Drain) R

thJC

0.4

SQM120P10-10m1L

www.vishay.com

Vishay Siliconix

S15-2463-Rev. A, 19-Oct-15

2

Document Number: 76943

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= -250 μA -100 - -

V

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= -250 μA -1.5 -2.0 -2.5

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

GS

= 0 V V

DS

= -100 V - - -1

μA V

GS

= 0 V V

DS

= -100 V, T

J

= 125 °C - - -50

V

GS

= 0 V V

DS

= -100 V, T

J

= 175 °C - - -500

On-State Drain Current

a

I

D(on)

V

GS

= -10 V V

DS

≤ -5 V -120 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= -10 V I

D

= -30 A - 0.0081 0.0101

Ω

V

GS

= -10 V I

D

= -30 A, T

J

= 125 °C - - 0.0168

V

GS

= -10 V I

D

= -30 A, T

J

= 175 °C - - 0.0205

V

GS

= -4.5 V I

D

= -20 A - 0.0114 0.0150

Forward Transconductance

b

g

fs

V

DS

= -15 V, I

D

= -25 A - 60 - S

Dynamic

b

Input Capacitance C

iss

V

GS

= 0 V V

DS

= -25 V, f = 1 MHz

- 6750 9000

pF Output Capacitance C

oss

- 3500 5000

Reverse Transfer Capacitance C

rss

- 450 600

Total Gate Charge

c

Q

g

V

GS

= -10 V V

DS

= -50 V, I

D

= -70 A

- 125 190

nC Gate-Source Charge

c

Q

gs

-25-

Gate-Drain Charge

c

Q

gd

-30-

Gate Resistance R

g

f = 1 MHz 3 6.44 9.7 Ω

Turn-On Delay Time

c

t

d(on)

V

DD

= -50 V, R

L

= 0.71 Ω

I

D

≅ -70 A, V

GEN

= -10 V, R

g

= 1 Ω

-2030

ns

Rise Time

c

t

r

- 100 150

Turn-Off Delay Time

c

t

d(off)

- 120 180

Fall Time

c

t

f

- 200 300

Source-Drain Diode Ratings and Characteristics

b

Pulsed Current

a

I

SM

---480A

Forward Voltage V

SD

I

F

= -100 A, V

GS

= 0 V - -0.95 -1.5 V

Reverse Recovery Time

b

t

rr

V

R

= -80 V, I

F

= -50 A, di/dt = 100 A/μs

- 110 - ns

Reverse Recovery Charge

b

Q

rr

- 385 - nC

SQM120P10-10m1L

www.vishay.com

Vishay Siliconix

S15-2463-Rev. A, 19-Oct-15

3

Document Number: 76943

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

Output Characteristics

Transconductance

Capacitance

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

32

64

96

128

160

03691215

I

D

- Drain Current (A)

V

DS

-Drain-to-Source Voltage (V)

V

GS

= 10 V thru 5 V

V

GS

= 3 V

V

GS

= 4 V

0

20

40

60

80

100

0 7 14 21 28 35

g

fs

-Transconductance (S)

I

D

- Drain Current (A)

T

C

= 125 °C

T

C

= - 55 °C

T

C

= 25 °C

0

2400

4800

7200

9600

12000

0 20406080100

C - Capacitance (pF)

V

DS

-Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0

24

48

72

96

120

0246810

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= - 55 °C

T

C

= 125 °C

T

C

= 25 °C

0.000

0.006

0.012

0.018

0.024

0.030

0 20406080100120

R

DS(on)

-On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 4.5 V

V

GS

= 10 V

0

2

4

6

8

10

0 306090120150

V

GS

- Gate-to-Source Voltage (V)

Q

g

-Total Gate Charge (nC)

I

D

= 70 A

V

DS

= 50 V

SQM120P10_10M1LGE3

SQM120P10_10M1LGE3

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