APL1001J Datasheet APL1001J | P1-P3

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

050-5904 Rev C 3-2002

POWER MOS IV

®

STATIC ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise specified.

SOT-227

G

S

D

"UL Recognized" File No. E145592 (S)

APL1001J 1000V 18.0A 0.60W

SINGLE DIE ISOTOP

®

PACKAGE

ISOTOP

®

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

G

D

S

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

C

= 25°C

Pulsed Drain Current

1

and Inductive Current Clamped

Gate-Source Voltage

Total Power Dissipation @ T

C

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

APL1001J

1000

18

72

±30

520

4.16

-55 to 150

300

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250 µA)

On State Drain Current

2

(V

DS

> I

D

(ON) x R

DS

(ON) Max, V

GS

= 8V)

Drain-Source On-State Resistance

2

(V

GS

= 10V, 0.5 I

D

[Cont.])

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 0.8 V

DSS

, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 2.5mA)

MIN TYP MAX

1000

18

0.60

250

1000

±100

24

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

UNIT

Volts

Amps

Ohms

µA

nA

Volts

Symbol

V

DSS

I

D

I

DM

, l

LM

V

GS

P

D

T

J

,T

STG

T

L

Symbol

BV

DSS

I

D

(ON)

R

DS

(ON)

I

DSS

I

GSS

V

GS

(TH)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

APT Website - http://www.advancedpower.com

THERMAL CHARACTERISTICS

Characteristic

Junction to Case

Junction to Ambient

RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

Symbol

R

θJC

R

θJA

V

Isolation

Torque

MIN TYP MAX

0.24

40

2500

13

UNIT

°C/W

Volts

lb•in

DYNAMIC CHARACTERISTICS APL1001J

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

SAFE OPERATING AREA CHARACTERISTICS

Test Conditions / Part Number

V

DS

= 400 V, I

DS

= 0.813A, t = 20 sec., T

C

= 60°C

Watts

Symbol

C

iss

C

oss

C

rss

t

d

(on)

t

r

t

d

(off)

t

f

MIN TYP MAX

6000 7200

775 1080

285 430

14 28

60 92

14 20

UNIT

pF

ns

Symbol

SOA1

MIN TYP MAX

325

UNIT

Characteristic

Safe Operating Area

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D

[Cont.] @ 25°C

R

G

= 0.6Ω

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

I

D

, DRAIN CURRENT (AMPERES)

I

D

, DRAIN CURRENT (AMPERES)

40

30

20

10

0

40

30

20

10

0

020406080100 0 4 8 121620

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

6.0 V

5.0 V

5.5 V

4.5 V

V

GS

= 15V, 10V, 8V, 7V & 6.5V

10

-5

10

-4

10

-3

10

-2

10

-1

1.0 10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.3

0.1

0.05

0.01

0.005

0.001

Z

θ

JC

, THERMAL IMPEDANCE (°C/W)

Note:

Duty Factor D =

t

1

/

t

2

Peak T

J

= P

DM

x Z

θJC

+ T

C

t

1

t

2

P

DM

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D=0.5

6.0 V

5.0 V

5.5 V

4.5 V

V

GS

=6.5V, 7.0V, 8.0V,

10V & 15V

050-5904 Rev C 3-2002

I

D

, DRAIN CURRENT (AMPERES) R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

C, CAPACITANCE (pF) V

GS

(TH), THRESHOLD VOLTAGE BV

DSS

(ON), DRAIN-TO-SOURCE BREAKDOWN R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE

(NORMALIZED) VOLTAGE (NORMALIZED)

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

D

, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

DS

(ON) vs DRAIN CURRENT

T

C

, CASE TEMPERATURE (°C) T

J

, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

T

J

, JUNCTION TEMPERATURE (°C) T

C

, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

V

DS

> I

D

(ON) x R

DS

(ON)MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

T

J

= -55°C

T

J

= +125°C

T

J

= +25°C T

J

= -55°C

V

GS

=10V

V

GS

=20V

I

D

= 0.5 I

D

[Cont.]

V

GS

= 10V

C

rss

C

oss

C

iss

20

15

10

5

0

20

15

10

5

0

2.5

2.0

1.5

1.0

0.5

0.0

100

10

1

.1

100µS

1mS

10mS

100mS

DC

OPERATION HERE

LIMITED BY R

DS

(ON)

T

C

=+25°C

T

J

=+150°C

SINGLE PULSE

02468 010203040

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

1 10 100 1000 .01 .1 1 10 50

1.30

1.20

1.10

1.00

0.90

0.80

1.15

1.10

1.05

1.00

0.95

0.90

0.85

1.2

1.1

1.0

0.9

0.8

0.7

0.6

20,000

10,000

5,000

1,000

500

100

NORMALIZED TO

V

GS

= 10V @ 0.5 I

D

[Cont.]

050-5904 Rev C 3-2002

APL1001J

APL1001J

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