IRFR/U9024N
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2 0.6 0.9 1.3 1.6
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
1000
1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0
100
200
300
400
500
600
700
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MH z
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
is s
C
oss
C
rss
0
4
8
12
16
20
0 5 10 15 20 25
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
FOR TEST CIRCUIT
SEE FIGURE 13
I = -7.2A
V = -44V
V = -28V
D
DS
DS