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PBSS4041NX,115

P1-P3P4-P6P7-P9P10-P12P13-P15
PBSS4041NX_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 1 April 2010 7 of 15
NXP Semiconductors
PBSS4041NX
60 V, 6.2 A NPN low V
CEsat
(BISS) transistor
V
CE
=2V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
V
CE
=2V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
I
C
(mA)
10
−1
10
5
10
4
10
3
110
2
10
006aac210
400
600
200
800
1000
h
FE
0
(1)
(3)
(2)
V
CE
(V)
0.0 5.04.02.0 3.01.0
006aac211
8.0
4.0
12.0
16.0
I
C
(A)
0.0
I
B
(mA) = 300
30
90
60
270
240
210
180
150
120
I
C
(mA)
10
−1
10
5
10
4
10
3
110
2
10
006aac212
0.6
1.0
1.4
V
BE
(V)
0.2
(1)
(3)
(2)
I
C
(mA)
10
−1
10
5
10
4
10
3
110
2
10
006aac213
0.6
1.0
1.4
V
BEsat
(V)
0.2
(1)
(3)
(2)
PBSS4041NX_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 1 April 2010 8 of 15
NXP Semiconductors
PBSS4041NX
60 V, 6.2 A NPN low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
10
−1
10
−2
1
V
CEsat
(V)
10
−3
006aac214
I
C
(mA)
10
−1
10
5
10
4
10
3
110
2
10
(1)
(3)
(2)
10
−1
10
−2
1
V
CEsat
(V)
10
−3
006aac215
I
C
(mA)
10
−1
10
5
10
4
10
3
110
2
10
(1)
(3)
(2)
006aac216
10
−1
1
10
10
2
R
CEsat
(Ω)
10
−2
I
C
(mA)
10
−1
10
5
10
4
10
3
110
2
10
(1)
(2)
(3)
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
006aac217
I
C
(mA)
10
−1
10
5
10
4
10
3
110
2
10
(1)
(2)
(3)
PBSS4041NX_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 1 April 2010 9 of 15
NXP Semiconductors
PBSS4041NX
60 V, 6.2 A NPN low V
CEsat
(BISS) transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 13. BISS transistor switching time definition
Fig 14. Test circuit for switching times
006aaa003
I
Bon
(100 %)
I
B
input pulse
(idealized waveform)
I
Boff
90 %
10 %
I
C
(100 %)
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
R
C
R2
R1
DUT
mlb826
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
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PBSS4041NX,115

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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT Single NPN 60V 6.2A 600mW 130MHz
Lifecycle:
New from this manufacturer.
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