BYV54V-200

1/5

BYV54V

BYV541V

®

May 2000 - Ed : 2E

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

SUITED FOR SMPS

VERY LOW FORWARD LOSSES

NEGLIGIBLE SWITCHING LOSSES

HIGH SURGE CURRENT CAPABILITY

HIGH AVALANCHE ENERGY CAPABILITY

INSULATED :

Insulating voltage = 2500 V

RMS

Capacitance = 45 pF

DESCRIPTION

FEATURES

Dual rectifier suited for switchmode power supply

and high frequency DC to DC converters.

Packaged in ISOTOP

TM

this device is intended for

use in low voltage, high frequency inverters, free

wheeling and polarity protection applications.

ISOTOP

(Plastic)

Symbol Parameter Value Unit

I

F(RMS)

RMS forward current

Per diode

100 A

I

F(AV)

Average forward current δ = 0.5

Tc=90°C Per diode

50 A

I

FSM

Surge non repetitive forward current

tp=10ms

sinusoidal

Per diode

1000 A

Tstg

Tj

Storage and junction temperature range

-40to+

150

-40to+150

°C

°C

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter BYV54V / BYV541V Unit

V

RRM

Repetitive peak reverse voltage

200 V

ISOTOP is a trademark of STMicroelectronics.

K2 A2

A1K1

BYV541V-200

A2 K1

A1K2

BYV54V-200

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

BYV54V / BYV541V

2/5

Symbol Test Conditions Min. Typ. Max. Unit

I

R

*

T

j

=25°CV

R

=V

RRM

50 µA

T

j

= 100°C

5mA

V

F**

T

j

= 125°C I

F

=50A

0.85 V

T

j

= 125°C I

F

= 100 A

1.00

T

j

= 25°C I

F

= 100 A

1.15

Pulse test :

* tp = 5 ms, duty cycle<2%

** tp = 380 µs, duty cycle<2%

ELECTRICAL CHARACTERISTICS (Per diode)

STATIC CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

trr T

j

= 25°C I

F

= 0.5A

I

R

=1A

Irr = 0.25A 40 ns

I

F

=1A

V

R

= 30V

dI

F

/dt = -50A/µs60

tfr T

j

= 25°C I

F

=1A

V

FR

=1.1xV

F

tr=5ns 10 ns

V

FP

T

j

= 25°C I

F

=1A tr=5ns 1.5 V

RECOVERY CHARACTERISTICS

Symbol Parameter Value Unit

Rth (j-c)

Junction to case

Per diode

1.2 °C/W

Total

0.85

Rth (c)

Coupling

0.1 °C/W

When the diodes 1 and 2 are used simultaneously :

Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

THERMAL RESISTANCE

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

BYV54V / BYV541V

3/5

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

0

200

400

600

800

1000

T

I

M

=tp/T

tp

I

M(A)

P=15W

P=60W

P=45W

P=30W

Fig.2 : Peak current versus form factor.

Tj=125 C

o

IFM(A)

1 10 100 500

VFM(V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Fig.3 : Forward voltage drop versus forward

current (maximum values).

0.1

1.0

0.2

0.5

Zth(j-c) (tp. )

K=

Rth(j-c)

=0.5

=0.2

=0.1

Single pulse

tp(s)

T

=tp/T

tp

1.0E-03 1.0E-02 1.0E-01

1.0E+00

K

Fig.4 : Relative variation of thermal impedance

junction to case versus pulse duration.

0 5 10 15 20 25 30 35 40 45 50

0

5

10

15

20

25

30

35

40

45

=0.05

=0.1

=0.2

=0.5

T

=tp/T

tp

I

F(av)(A)

P

F(av)(W)

=1

Fig.1 : Average forward power dissipation versus

average forward current.

0 20 40 60 80 100 120 140 160

0

10

20

30

40

50

60

T

=tp/T

tp

=0.5

F(av)(A)

I

o

Tamb( C)

Rth(j-a)=Rth(j-c)

Fig.6 : Average current versus ambient

temperature. (duty cycle : 0.5)

0.001 0.01 0.1 1

0

100

200

300

400

IM

t

=0.5

t(s)

I

M(A)

Tc=25 C

o

Tc=50 C

o

Tc=90 C

o

Fig.5 : Non repetitive surge peak forward current

versus overload duration.

Obsolete Product(s) - Obsolete Product(s)

BYV54V-200

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

DIODE MODULE 200V 50A ISOTOP

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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