LT1206
10
1206fb
applicaTions inForMaTion
For applications where the full bandwidth of the amplifier
is not required, the quiescent current of the device may be
reduced by connecting a resistor from the shutdown pin
to ground. The quiescent current will be approximately 40
times the current in the shutdown pin. The voltage across
the resistor in this condition is V
+
– 3V
BE
. For example, a
60k resistor will set the quiescent supply current to 10mA
with V
S
= ±15V.
The photos (Figures 4a and 4b) show the effect of reducing
the quiescent supply current on the large-signal response.
The quiescent current can be reduced to 5mA in the invert-
ing configuration without much change in response. In
noninverting mode, however, the slew rate is reduced as
the quiescent current is reduced.
Slew Rate
Unlike a traditional op amp, the slew rate of a current
feedback amplifier is not independent of the amplifier gain
configuration. There are slew rate limitations in both the
input stage and the output stage. In the inverting mode,
and for higher gains in the noninverting mode, the signal
amplitude on the input pins is small and the overall slew
rate is that of the output stage. The input stage slew rate
is related to the quiescent current and will be reduced as
the supply current is reduced. The output slew rate is set
by the value of the feedback resistors and the internal
capacitance. Larger feedback resistors will reduce the slew
rate as will lower supply voltages, similar to the way the
bandwidth is reduced. The photos (Figures 5a, 5b and 5c)
show the large-signal response of the LT1206 for various
gain configurations. The slew rate varies from 860V/µs
for a gain of 1, to 1400V/µs for a gain of –1.
Figure 4a. Large-Signal Response vs I
Q
, A
V
= –1
Figure 4b. Large-Signal Response vs I
Q
, A
V
= 2
Figure 5a. Large-Signal Response, A
V
= 1
Figure 5b. Large-Signal Response, A
V
= –1
R
F
= 750Ω
R
L
= 50Ω
I
Q
= 5mA, 10mA, 20mA
V
S
= ±15V
50ns/DIV
1206 F04a
R
F
= 750Ω
R
L
= 50Ω
I
Q
= 5mA, 10mA, 20mA
V
S
= ±15V
50ns/DIV
1206 F04b
R
F
= 825
R
L
= 50
V
S
= ±15V
20ns/DIV
1206 F05a
R
F
= R
G
= 750Ω
R
L
= 50Ω
V
S
= ±15V
20ns/DIV
1206 F05b
LT1206
11
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applicaTions inForMaTion
When the LT1206 is used to drive capacitive loads, the
available output current can limit the overall slew rate. In
the fastest configuration, the LT1206 is capable of a slew
rate of over 1V/ns. The current required to slew a capaci-
tor at this rate is 1mA per picofarad of capacitance, so
10,000pF would require 10A! The photo (Figure 6) shows
the large signal behavior with C
L
= 10,000pF. The slew rate
is about 60V/µs, determined by the current limit of 600mA.
Differential Input Signal Swing
The differential input swing is limited to about ±6V by
an ESD protection device connected between the inputs.
In normal operation, the differential voltage between the
input pins is small, so this clamp has no effect; however,
in the shutdown mode the differential swing can be the
same as the input swing. The clamp voltage will then set
the maximum allowable input voltage. To allow for some
margin, it is recommended that the input signal be less
than ±5V when the device is shut down.
Capacitance on the Inverting Input
Current feedback amplifiers require resistive feedback from
the output to the inverting input for stable operation. Take
care to minimize the stray capacitance between the output
and the inverting input. Capacitance on the inverting input
to ground will cause peaking in the frequency response
(and overshoot in the transient response), but it does not
degrade the stability of the amplifier.
Power Supplies
The LT1206 will operate from single or split supplies from
±5V (10V total) to ±15V (30V total). It is not necessary to
use equal value split supplies, however the offset voltage
and inverting input bias current will change. The offset
voltage changes about 500µV per volt of supply mismatch.
The inverting bias current can change as much as 5µA per
volt of supply mismatch, though typically the change is
less than 0.5µA per volt.
Thermal Considerations
The LT1206 contains a thermal shutdown feature which
protects against excessive internal (junction) temperature.
If the junction temperature of the device exceeds the pro-
tection threshold, the device will begin cycling between
normal operation and an off state. The cycling is not
harmful to the part. The thermal cycling occurs at a slow
rate, typically 10ms to several seconds, which depends
on the power dissipation and the thermal time constants
of the package and heat sinking. Raising the ambient
temperature until the device begins thermal shutdown
gives a good indication of how much margin there is in
the thermal design.
For surface mount devices heat sinking is accomplished
by using the heat spreading capabilities of the PC board
and its copper traces. Experiments have shown that the
heat spreading copper layer does not need to be electri-
cally connected to the tab of the device. The PCB material
can be very effective at transmitting heat between the pad
area attached to the tab of the device, and a ground or
Figure 5c. Large-Signal Response, A
V
= 2
Figure 6. Large-Signal Response, C
L
= 10,000pF
R
F
= 750Ω
R
L
= 50Ω
20ns/DIV
1206 F05c
V
S
= ±15V
R
L
= R
G
= 3k
R
L
= ∞
500ns/DIV
1206 G06
LT1206
12
1206fb
applicaTions inForMaTion
power plane layer either inside or on the opposite side of
the board. Although the actual thermal resistance of the
PCB material is high, the length/area ratio of the thermal
resistance between the layer is small. Copper board stiffen-
ers and plated through holes can also be used to spread
the heat generated by the device.
Tables 1 and 2 list thermal resistance for each package.
For the TO-220 package, thermal resistance is given for
junction-to-case only since this package is usually mounted
to a heat sink. Measured values of thermal resistance for
several different board sizes and copper areas are listed
for each surface mount package. All measurements were
taken in still air on 3/32" FR-4 board with 1oz copper. This
data can be used as a rough guideline in estimating thermal
resistance. The thermal resistance for each application will
be affected by thermal interactions with other components
as well as board size and shape.
Table 1. R Package, 7-Lead DD
COPPER AREA
BOARD AREA
THERMAL RESISTANCE
(JUNCTION-TO-AMBIENT)TOPSIDE* BACKSIDE
2500 sq. mm 2500 sq. mm 2500 sq. mm 25°C/W
1000 sq. mm 2500 sq. mm 2500 sq. mm 27°C/W
125 sq. mm 2500 sq. mm 2500 sq. mm 35°C/W
*Tab of device attached to topside copper.
Table 2. S8 Package, 8-Lead Plastic SO
COPPER AREA
BOARD AREA
THERMAL RESISTANCE
(JUNCTION-TO-AMBIENT)TOPSIDE* BACKSIDE
2500 sq. mm 2500 sq. mm 2500 sq. mm 60°C/W
1000 sq. mm 2500 sq. mm 2500 sq. mm 62°C/W
225 sq. mm 2500 sq. mm 2500 sq. mm 65°C/W
100 sq. mm 2500 sq. mm 2500 sq. mm 69°C/W
100 sq. mm 1000 sq. mm 2500 sq. mm 73°C/W
100 sq. mm 225 sq. mm 2500 sq. mm 80°C/W
100 sq. mm 100 sq. mm 2500 sq. mm 83°C/W
*Pins 1 and 8 attached to topside copper.
Y Package, 7-Lead TO-220
Thermal Resistance (Junction-to-Case) = 5°C/W
N8 Package, 8-Lead DIP
Thermal Resistance (Junction-to-Ambient) = 100°C/W
Calculating Junction Temperature
The junction temperature can be calculated from the
equation:
T
J
= (P
D
× θ
JA
) + T
A
where:
T
J
= Junction Temperature
T
A
= Ambient Temperature
P
D
= Device Dissipation
θ
JA
= Thermal Resistance (Junction-to Ambient)
As an example, calculate the junction temperature for the
circuit in Figure 7 for the N8, S8, and R packages assuming
a 70°C ambient temperature.
The device dissipation can be found by measuring the
supply currents, calculating the total dissipation, and
then subtracting the dissipation in the load and feedback
network.
P
D
= (39mA × 30V) – (12V)
2
/(2k||2k) = 1.03W
Then:
T
J
= (1.03W × 100°C/W) + 70°C = 173°C
for the N8 package.
T
J
= (1.03W × 65°C/W) × + 70°C = 137°C
for the S8 with 225 sq. mm topside heat sinking.
T
J
= (1.03W × 35°C/W) × + 70°C = 106°C
for the R package with 100 sq. mm topside heat
sinking.
Since the maximum junction temperature is 150°C, the
N8 package is clearly unacceptable. Both the S8 and R
packages are usable.
Figure 7. Thermal Calculation Example
+
15V
15V
0.01µF
2k
330Ω
2k 300pF
12V
12V
f = 2MHz
39mA
I
1206 F07
LT1206
S/D

LT1206CS8#TRPBF

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
High Speed Operational Amplifiers 250mA Out, 900V/us, 60MHz CFA
Lifecycle:
New from this manufacturer.
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