BA6506F-GE2 Datasheet BA6506F-GE2 | P1-P3

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

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TSZ02201-0H1H0B100490-1-2

18.DEC.2012 Rev.002

TSZ22111・14・001

Datashee

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www.rohm.com

DC Brushless Motor Drivers for Cooling Fans

Two-Phase Half-Wave Pre Driver

Fan Motor Driver

BA6506F

●General description

BA6506F is two-phase half-wave fan motor pre-driver.

This driver incorporates lock protection, automatic restart

circuit and Rotation speed pulse signal (FG) output.

●Features

 Pre-driver

 Incorporates lock protection and automatic restart

circuit

 Rotation speed pulse signal (FG) output

●Package W (Typ.) x D (Typ.) x H (Max.)

SOP8 5.00mm x 6.20mm x 1.71mm

●Application

 For desktop PC, server, general consumer equipment, communication equipment and industrial equipment.

●Absolute maximum ratings

Parameter Symbol Limit Unit

Supply voltage

Vcc

30 V

Power dissipation

Pd

624

*1

mW

Operating temperature range

Topr

–40 to +100 °C

Storage temperature range

Tstg

–55 to +125 °C

Output current

Iomax

70

mA

Rotation speed pulse signal (FG) output voltage

IFG

8 mA

Rotation speed pulse signal (FG) output current

VFG

30 V

Junction temperature

Tjmax

125 °C

*1 Reduce by 6.24mW/°C over Ta=25°C. (On 70.0mm×70.0mm×1.6mm glass epoxy board)

●Recommended operating conditions

Parameter Symbol Limit Unit

Operating supply voltage range Vcc 4.0 to 28.0 V

Hall input voltage range VH 1.0∼Vcc-0.5 V

SOP8

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

2/12

TSZ02201-0H1H0B100490-1-2

18.DEC.2012 Rev.002

TSZ22111・14・001

BA6506F

www.rohm.com

●Pin configuration

●Pin description

P/No. T/Name Function

1

Vcc Power terminal

2

H+ Hall input terminal +

3

FG

Rotating speed pulse signal output

terminal

4

H- Hall input terminal -

5

GND GND terminal

6

LD

Lock detection and automatic

restart capacitor connecting

terminal

7

A1 Output terminal 1

8

A2 Output terminal 2

●Block diagram

●I/O truth table

H+ H- A1 A2 FG

H L H (Output Tr ON) L (Output Tr OFF) H (Output Tr OFF)

L H L (Output Tr OFF) H (Output Tr ON) L (Output Tr ON)

H; High, L; Low, Hi-Z; High impedance

FG output is open-drain type.

Fig.2 Block diagram

Fig.1 Pin configuration

(TOP VIEW)

LD

FG

H-

H+

VCC

A

1

A

2

1

2

3

4

7

8

6

5

LOGIC

1

2

3

4

8

7

6

5

Lock

Detect

Auto

Restart

REG

Vcc

H+

FG

H-

GND

LD

A

1

A

2

+

-

HALL

AMP

+

-

+

-

GND

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

3/12

TSZ02201-0H1H0B100490-1-2

18.DEC.2012 Rev.002

TSZ22111・14・001

BA6506F

www.rohm.com

●Electrical characteristics(Unless otherwise specified Ta=25°C, Vcc=12V)

Parameter Symbol

Limit

Unit Conditions

Min. Typ. Max.

Circuit current Icc - 3.2 5.0 mA At output OFF

Hall input hysteresis

Vhys ±3- ±15mV

FG output L voltage VFG - - 0.5 V IFG=5mA

FG current capacity IFG 8.0 - - mA VFG=2V

Charge current of capacitor for

lock detection

ILDC 2.0 3.45 5.25

μA

VLD=1.5V

Discharge current of capacitor

for lock detection

ILDD 0.35 0.80 1.45 μA VLD=1.5V

Charge-discharge current ratio of

capacitor for lock detection

rCD 3 4.5 8 - rCD=ILDC/ILDD

Clamp voltage of capacitor for

lock detection

VLDCL 2.2 2.6 3.0 V

Comparison voltage of capacitor

for lock detection

VLDCP 0.4 0.6 0.8 V

Output H voltage VOH 10 10.5 - V Io=10mA

BA6506F-GE2

BA6506F-GE2

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