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BUK7Y3R5-40HX

P1-P3P4-P6P7-P9P10-P12P13-P14
BUK7Y3R5-40H
N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56
8 May 2018 Product data sheet
1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction
technology, housed in a robust LFPAK56 package. This product has been fully designed and
qualified to meet AEC-Q101 requirements delivering high performance and endurance.
2. Features and benefits
• Fully automotive qualified to AEC-Q101:
• 175 °C rating suitable for thermally demanding environments
• Trench 9 Superjunction technology:
• Reduced cell pitch enables enhanced power density and efficiency with lower R
DSon
in
same footprint
• Improved SOA and avalanche capability compared to standard TrenchMOS
• Tight V
GS(th)
limits enable easy paralleling of MOSFETs
• LFPAK Gull Wing leads:
• High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike
traditional QFN packages
• Visual (AOI) soldering inspection, no need for expensive x-ray equipment
• Easy solder wetting for good mechanical solder joint
• LFPAK copper clip technology:
• Improved reliability, with reduced R
th
and R
DSon
• Increases maximum current capability and improved current spreading
3. Applications
• 12 V automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage 25 °C ≤ T
j
≤ 175 °C - - 40 V
I
D
drain current V
GS
= 10 V; T
mb
= 25 °C; Fig. 2 [1] - - 120 A
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - - 115 W
Nexperia
BUK7Y3R5-40H
N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
2 2.9 3.5 mΩ
Dynamic characteristics
Q
GD
gate-drain charge I
D
= 25 A; V
DS
= 32 V; V
GS
= 10 V;
Fig. 13; Fig. 14
- 6 15 nC
Source-drain diode
Q
r
recovered charge I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 20 V; Fig. 17
- 16 - nC
S softness factor I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 20 V; T
j
= 25 °C
- 0.8 -
[1] 120A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 S source
2 S source
3 S source
4 G gate
mb D mounting base; connected to
drain
mb
1 2 3 4
LFPAK56; Power-
SO8 (SOT669)
S
D
G
mbb076
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BUK7Y3R5-40H LFPAK56;
Power-SO8
plastic, single-ended surface-mounted package; 4 terminals SOT669
7. Marking
Table 4. Marking codes
Type number Marking code
BUK7Y3R5-40H 73H540
BUK7Y3R5-40H All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 8 May 2018 2 / 14
Nexperia
BUK7Y3R5-40H
N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage 25 °C ≤ T
j
≤ 175 °C - 40 V
V
GS
gate-source voltage DC; T
j
≤ 175 °C -10 20 V
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - 115 W
V
GS
= 10 V; T
mb
= 25 °C; Fig. 2 [1] - 120 AI
D
drain current
V
GS
= 10 V; T
mb
= 100 °C; Fig. 2 [1] - 93 A
I
DM
peak drain current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C; Fig. 3 - 526 A
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
= 25 °C [1] - 120 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 526 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
I
D
= 120 A; V
sup
≤ 40 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped;
Fig. 4
[2] [3] - 45 mJ
[1] 120A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Refer to application note AN10273 for further information.
T
mb
(°C)
0 20015050 100
03na19
40
80
120
P
der
(%)
0
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
aaa-026228
0 25 50 75 100 125 150 175 200
0
25
50
75
100
125
150
T
mb
(°C)
I
D
I
D
(A)(A)
(1)(1)
V
GS
≥ 10 V
(1) 120A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Fig. 2. Continuous drain current as a function of
mounting base temperature
BUK7Y3R5-40H All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 8 May 2018 3 / 14
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK7Y3R5-40HX

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Manufacturer:
Nexperia
Description:
MOSFET N-channel 40 V, 3.5 mO standard level MOSFET in LFPAK56
Lifecycle:
New from this manufacturer.
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