LT1336
10
1336fa
applicaTions inForMaTion
operaTion
ing supply. This allows the output to smoothly transition
to 100% duty cycle.
An undervoltage detection circuit disables both channels
when V
+
is below the undervoltage trip point. A separate
undervoltage detect block disables the high side channel
when V
BOOST
– V
TSOURCE
is below 9V.
The top and bottom gate drivers in the LT1336 each utilize
two gate connections: 1) a Gate Drive pin, which provides
the turn-on and turn-off currents through an optional series
gate resistor, and 2) a Gate Feedback pin which connects
directly to the gate to monitor the gate-to-source voltage.
Whenever there is an input transition to command the
outputs to change states, the LT1336 follows a logical
sequence to turn off one MOSFET and turn on the other.
First, turn-off is initiated, then V
GS
is monitored until it
has decreased below the turn-off threshold, and finally
the other gate is turned on.
The LT1336 incorporates two independent driver chan-
nels with separate inputs and outputs. The inputs are
TTL/CMOS compatible; they can withstand input voltages
as high as V
+
. The 1.4V input threshold is regulated and
has 300mV of hysteresis. Both channels are noninverting
drivers. The internal logic prevents both outputs from
simultaneously turning on under any input conditions.
When both inputs are high both outputs are actively
held low.
An internal switching regulator permits smooth transi-
tion from PWM to DC operation. In PWM operation the
bootstrap capacitor is recharged each time Top Source pin
goes low. As the duty cycle approaches 100% the output
pulse width becomes narrower and the time available to
produce an elevated upper MOSFET gate supply becomes
shorter than required. As the voltage across the bootstrap
capacitor drops below 10.6V, an inductor-based switching
regulator kicks in and takes over the charging of the float-
connected between V
+
and the Boost pin is still needed to
allow conventional bootstrapping of the bootstrap capaci-
tor when duty cycles are below 90%.
The LT1336’s internal switching regulator can provide
enough charge to the bootstrap capacitor to allow the
top driver to drive several power MOSFETs in parallel at
its maximum operating frequency. The regulated voltage
across V
BOOST
– V
TSOURCE
is 10.6V; when this voltage is
exceeded due to normal bootstrap action, the regulator
automatically shuts down.
The switching regulator uses a hysteretic current mode
control. This method of control is simple, inherently stable
and provides peak inductor current limit in every cycle. It is
designed to run at a nominal frequency of around 700kHz
which is 7× the maximum PWM operating frequency of the
LT1336. Since the hysteretic current mode control has no
internal oscillator, the frequency is determined by external
conditions such as supply voltage and load currents and
external components such as inductor value and current
sense resistor value.
Deriving the Floating Supply
In a typical half-bridge driver like the LT1158 or the LT1160,
the floating supply for the topside driver is provided by
a bootstrap capacitor. This capacitor is recharged each
time its negative plate goes low in PWM operation. As
the duty cycle approaches 100% the output pulse width
becomes narrower and the time available to recharge the
bootstrap capacitor becomes shorter than required (1µs
to 2µs). For instance, at 100kHz and at 95% duty cycle the
output pulse width is only 0.5µs; clearly this is insufficient
time to recharge the capacitor by bootstrapping. To get
around this problem, the LT1336 incorporates a switching
regulator to help recharge the bootstrap capacitor under
such extreme conditions.
The LT1336 provides all the necessary circuitry to construct
a boost or flyback switching regulator. This regulator can
charge the bootstrap capacitor when it cannot recharge
by bootstrapping. This happens when nearing 100% duty
cycle in PWM applications. This is a worst-case condition
because the bootstrap capacitor must still provide for the
gate charging current of the high side MOSFETs. A diode
(Refer to Functional Diagram)
LT1336
11
1336fa
applicaTions inForMaTion
Figure 1. Using the Boost Regulator
In applications where switching is always above 10kHz
and the duty cycle never exceeds 90%, Pins 1, 15 and 16
can be left open. The bootstrap capacitor is then charged
by conventional bootstrapping. Only a diode needs to be
connected between V
+
and the Boost pin. A 0.1µF bootstrap
capacitor is usually adequate using this technique for driv-
ing a single MOSFET under 10,000pF. When driving multiple
MOSFETs in parallel, if the total gate capacitance exceeds
10,000pF, the bootstrap capacitor should be increased
proportionally above 0.1µF (see Paralleling MOSFETs).
Deriving the Floating Supply with the Boost Topology
The advantage of using the boost topology is its simplicity.
Only a resistor, a small inductor, a diode and a capacitor
are needed. However, the high voltage rail may not exceed
40V to avoid reaching the collector-base breakdown volt-
age of the internal NPN switch.
The recommended values for the current sense resistor,
inductor and bootstrap capacitor are 2Ω, 200µH and
1µF respectively. Using the recommended component
values the boost regulator will run at around 700kHz. To
lower the frequency the inductor value can be increased
and to increase the frequency the inductor value can be
decreased. The sense resistor should be at least 1.5Ω to
maintain adequate inductor current limit. The bootstrap
capacitor value should be 1µF or larger to minimize ripple
voltage. An example of a boost regulator is shown in
Figure 1.
The boost regulator works as follows: when switch S is
on, the inductor current ramps up as the magnetic field
builds up. During this interval energy is being stored in the
inductor and no power is transferred to V
BOOST
. When the
inductor peak current is reached, sensed by the 2Ω resistor,
the switch is turned off. Energy is no longer transferred to
the inductor causing the magnetic field to collapse. The
collapsing magnetic field induces a change in voltage across
the inductor. The Switch pin voltage rises until diode D2
starts conducting. As the inductor current ramps down,
the lower inductor current threshold is reached and switch
S is turned off, thus completing the cycle.
Current drawn from V
+
is delivered to V
BOOST
. Some of
this current (~ 1.5mA) flows through the topside driver
to the Top Source pin. This current is typically returned
to ground via the bottom MOSFET or the output load. If
the bottom MOSFET were off and the output load were
returned to HV, then the Top Source pin will return the
current to HV through the top MOSFET or the output load.
If the HV supply cannot sink current and no load draw-
ing greater than 1.5mA is connected to the supply, then
a resistor from HV to ground may be needed to prevent
voltage buildup on the HV supply.
Note that the current drawn from V
+
and delivered to
V
BOOST
is significantly higher than the current drawn from
V
BOOST
as given by:
I
IN V
+
( )
=I
OUT
V
BOOST
V
+
Deriving the Floating Supply with the Flyback
Topology
For applications where the high voltage rail is greater than
40V, the flyback topology must be used. To configure a
flyback regulator, a resistor, a diode, a small 1:1 turns ratio
transformer and a capacitor are needed. The maximum
voltage across the switch, assuming an ideal transformer,
will be about V
+
+ 11.3V. Leakage inductance in nonideal
transformers will induce an overvoltage spike at the switch
at the instant when it opens. These spikes can be clamped
using a snubbing network or a Zener. Unlike the boost
topology, the current drawn from V
+
(assuming no loss)
is equal to the current drawn from V
BOOST
.
SWITCH
SV
+
PV
+
R
SENSE
1/4W
C
BOOST
1µF
D2
1N4148
S
HV = 40V MAX
+
V
BOOST
1336 F01
LT1336
200µH*
D1
1N4148
* SUMIDA RCR-664D-221KC
+
+
SWGND
I
SENSE
TGATEDR
TGATEFB
BOOST
TSOURCE
LT1336
12
1336fa
applicaTions inForMaTion
Using the components as shown in Figure 2 the flyback
regulator will run at around 800kHz. To lower the frequency
C
FILTER
can be increased and to increase the frequency
C
FILTER
can be decreased.
Power MOSFET Selection
Since the LT1336 inherently protects the top and bottom
MOSFETs from simultaneous conduction, there are no size
or matching constraints. Therefore, selection can be made
based on the operating voltage and R
DS(ON)
requirements.
The MOSFET BV
DSS
should be at least equal to the LT1336
absolute maximum operating voltage. For a maximum
operating HV supply of 60V, the MOSFET BV
DSS
should
be from 60V to 100V.
The MOSFET R
DS(ON)
is specified at T
J
= 25°C and is gen-
erally chosen based on the operating efficiency required
as long as the maximum MOSFET junction temperature is
not exceeded. The dissipation in each MOSFET is given by:
P =D I
DS
( )
2
1+
( )
R
DS ON
( )
where D is the duty cycle and is the increase in R
DS(ON)
at the anticipated MOSFET junction temperature. From this
equation the required R
DS(ON)
can be derived:
R
DS ON
( )
=
P
D I
DS
( )
2
1+
( )
For example, if the MOSFET loss is to be limited to 2W
when operating at 5A and a 90% duty cycle, the required
R
DS(ON)
would be 0.089Ω/(1 + ). (1 + ) is given for
each MOSFET in the form of a normalized R
DS(ON)
vs
temperature curve, but = 0.007/°C can be used as an
approximation for low voltage MOSFETs. Thus, if T
A
= 85°C
and the available heat sinking has a thermal resistance of
20°C/W, the MOSFET junction temperature will be 125°C
and = 0.007(125 – 25) = 0.7. This means that the required
R
DS(ON)
of the MOSFET will be 0.089Ω/1.7 = 0.0523Ω,
which can be satisfied by an IRFZ34 manufactured by
International Rectifier.
Transition losses result from the power dissipated in each
MOSFET during the time it is transitioning from off to on,
or from on to off. These losses are proportional to (f)(HV)
2
and vary from insignificant to being a limiting factor on
operating frequency in some high voltage applications.
Figure 2. Using the Flyback Regulator
The flyback regulator works as follows: when switch S is
on, the primary current ramps up as the magnetic field
builds up. The magnetic field in the core induces a voltage
on the secondary winding equal to V
+
. However, no power
is transferred to V
BOOST
because the rectifier diode D2 is
reverse biased. The energy is stored in the transformers
magnetic field. When the primary inductor peak current
is reached, the switch is turned off. Energy is no longer
transferred to the transformer causing the magnetic field
to collapse. The collapsing magnetic field induces a change
in voltage across the transformers windings. During this
transition the Switch pin’s voltage flies to 10.6V plus a diode
above V
+
, the secondary forward biases the rectifier diode
D2 and the transformers energy is transferred to V
BOOST
.
Meanwhile the primary inductor current goes to zero and
the voltage at I
SENSE
decays to the lower inductor current
threshold with a time constant of (R
SENSE
)(C
FILTER
), thus
completing the cycle.
SWITCH
SV
+
PV
+
R
SENSE
1/4W
D2
1N4148
40V
1N4148
24V
1000pF
6.2k
S
HV =
60V MAX
1336 F02
LT1336
T1*
1:1
D1
1N4148
* COILTRONICS CTX100-1P
+
SWGND
I
SENSE
C
BOOST
1µF
C
FILTER
0.1µF
+
V
BOOST
+
TGATEDR
TGATEFB
BOOST
TSOURCE

LT1336IS#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Gate Drivers Half-Bridge N-Ch Pwr MOSFET Drvr w/ Boos
Lifecycle:
New from this manufacturer.
Delivery:
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