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BAT54SLT1G

P1-P3P4-P4
Publication Order Number:
BAT54SLT1/D
© Semiconductor Components Industries, LLC, 1997
October, 2016 − Rev. 17
1
BAT54SL
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ I
F
= 10 mAdc
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Reverse Voltage V
R
30 V
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
225
1.8
mW
mW/°C
Forward Current (DC) I
F
200 Max mA
Non−Repetitive Peak Forward Current
t
p
< 10 msec
Square pulse = 1 sec
I
FSM
600
1.0
mA
A
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
I
FRM
300
mA
Junction Temperature T
J
−55 to 150 °C
Storage Temperature Range T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
30 VOLT
DUAL HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
3
CATHODE/ANODE
1
ANODE
2
CATHODE
Device Package Shipping
†
ORDERING INFORMATION
BAT54SLT1G SOT−23
(Pb−Free)
3,000 / Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SOT−23
CASE 318
STYLE 11
MARKING DIAGRAM
1
LD3M G
G
LD3 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
SBAT54SLT1G SOT−23
(Pb−Free)
3,000 / Tape & Ree
l
www.onsemi.com
BAT54SL
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 A)
V
(BR)R
30 − −
V
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
C
T
− 7.6 10
pF
Reverse Leakage
(V
R
= 25 V)
I
R
− 0.5 2.0
Adc
Forward Voltage
(I
F
= 0.1 mA)
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 30 mA)
(I
F
= 100 mA)
V
F
−
−
−
−
−
0.22
0.29
0.35
0.41
0.52
0.24
0.32
0.40
0.50
0.80
V
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc, Figure 1)
t
rr
− − 5.0
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2 k
820
0.1 F
DUT
V
R
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
T
10%
90%
I
F
I
R
t
rr
T
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measure
d
at i
R(REC)
= 1 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAT54SL
www.onsemi.com
3
C
T
, TOTAL CAPACITANCE (pF)
100
0.0 0.1
V
F
, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4
0.5
10
1.0
0.1
85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
510
15
20
25
14
0
V
R
, REVERSE VOLTAGE (VOLTS)
12
4
2
0
51015 30
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Total Capacitance
−40°C
25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0.6
−55°C
150°C
125°C
100
1000
30
2520
6
8
10
I
R
, REVERSE CURRENT (A)
I
F
, FORWARD CURRENT (mA)
P1-P3P4-P4

BAT54SLT1G

Mfr. #:
Buy BAT54SLT1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 30V 225mW Dual
Lifecycle:
New from this manufacturer.
Delivery:
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