55
VTP Process Photodiodes VTP4085H, 4085SH
PRODUCT DESCRIPTION
Large area planar silicon mounted on a two lead
ceramic substrate and coated with a layer of
clear epoxy. Low junction capacitance permits
fast response time.
PACKAGE DIMENSIONS inch (mm)
CASE 13 CERAMIC
CHIP ACTIVE AREA: .032 in
2
(21 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -20°C to 75°C
Operating Temperature: -20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, pages 45-46)
SYMBOL CHARACTERISTIC TEST CONDITIONS
VTP4085H VTP4085SH
UNITS
Min. Typ. Max. Min. Typ. Max.
I
SC
Short Circuit Current H = 100 fc, 2850 200 200 µA
TC I
SC
I
SC
Temperature Coefficient 2850 K .20 .20 %/°C
I
SC
Short Circuit Current 100 µW/cm
2
, 940 nm 11.4 15 11.4 15 µA
V
OC
Open Circuit Voltage H = 100 fc, 2850 K .33 .33 mV
TC V
OC
V
OC
Temperature Coefficient 2850 K -2.0 -2.0 mV/°C
I
D
Dark Current H = 0, VR = 100 V 100 15 50 nA
R
SH
Shunt Resistance H = 0, V = 10 mV 2.0 4.0 MΩ
TC R
SH
R
SH
Temperature Coefficient H = 0, V = 10 mV -11 -11 %/°C
C
J
Junction Capacitance H = 0, V = 0 V .35 .35 nF
λ
range
Spectral Application Range 400 1100 400 1100 nm
λ
p
Spectral Response - Peak 925 925 nm
S
R
Sensitivity @ Peak .55 .55 A/W
Excelitas Technologies, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.excelitas.com
