NXP Semiconductors
PMPB10XNE
20 V, single N-channel Trench MOSFET
PMPB10XNE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 30 November 2012 6 / 14
Symbol Parameter Conditions Min Typ Max Unit
V
GS
= -8 V; V
DS
= 0 V; T
j
= 25 °C - - -10 µA
V
GS
= 4.5 V; I
D
= 9 A; T
j
= 25 °C - 10 14 mΩ
V
GS
= 4.5 V; I
D
= 9 A; T
j
= 150 °C - 15 21 mΩ
V
GS
= 2.5 V; I
D
= 8 A; T
j
= 25 °C - 12 18 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= 1.8 V; I
D
= 3.7 A; T
j
= 25 °C - 16 25 mΩ
g
fs
forward
transconductance
V
DS
= 10 V; I
D
= 9 A; T
j
= 25 °C - 60 - S
R
G
gate resistance f = 1 MHz - 2 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge - 23 34 nC
Q
GS
gate-source charge - 2.6 - nC
Q
GD
gate-drain charge
V
DS
= 10 V; I
D
= 6 A; V
GS
= 4.5 V;
T
j
= 25 °C
- 4.5 - nC
C
iss
input capacitance - 2175 - pF
C
oss
output capacitance - 235 - pF
C
rss
reverse transfer
capacitance
V
DS
= 10 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 205 - pF
t
d(on)
turn-on delay time - 13 - ns
t
r
rise time - 35 - ns
t
d(off)
turn-off delay time - 54 - ns
t
f
fall time
V
DS
= 10 V; I
D
= 6 A; V
GS
= 4.5 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
- 50 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= 2 A; V
GS
= 0 V; T
j
= 25 °C - 0.6 1.2 V
V
DS
(V)
0 431 2
017aaa897
12
24
36
I
D
(A)
0
V
GS
= 1.2 V
4.5 V
2.5 V
1.7 V
1.6 V
1.5 V
1.4 V
1.3 V
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
017aaa898
V
GS
(V)
0.0 1.20.80.4
10
-5
10
-4
10
-3
10
-2
I
D
(A)
10
-6
min typ max
T
j
= 25 °C; V
DS
= 5 V
Fig. 7. Subthreshold drain current as a function of
gate-source voltage
