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Document Number: 71107
S09-0767-Rev. D, 04-May-09
Vishay Siliconix
Si4426DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71107
.
Threshold Voltage
- 0.6
- 0.4
- 0.2
0.0
0.2
.
- 50 - 25 0 25 50 75 100 125 150
T
- Tem
erature
°C
I
D
= 250 µA
) V ( e c n a i r a V V
GS(th)
Single Pulse Power
0
30
5
10
20
) W
r e w o P
Time (s)
40
1 100 600 10 10
-1
10
-2
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 600 10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T e v i t c e
E d
e z
i l a m r o
N
e c n a d e p m
I
l a m r e h
T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70 °C/W
3. T
JM
– T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
1 10 10
-1
10
-4
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t
n
e i s
n
a r T
e v i t c e
E
d e z
i l
a m
r
o
N
e c
n a
d
e
p m
I
l a m r
e
h
T
