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TLP2631(F)

P1-P3P4-P6P7-P8
TLP2631
2014-09-01
1
TOSHIBA photocoupler GaAℓAs IRed & Photo IC
TLP2631
Isolated Line Receiver
Simplex / Multiplex Data Transmission
Computer-Peripheral Interface
Microprocessor System Interface
Digital Isolation for A / D, D / A Conversion
The TOSHIBA TLP2631 dual photocoupler consists of a pair of GaAℓAs
light emitting diode and integrated high gain, high speed photodetector.
This unit is 8-lead DIP.
The output of the detector circuit is an open collector, Schottky clamped
transistor.
A Faraday shield integrated on the photodetector chip reduces the effects
of capacitive coupling between the input LED emitter and the high gain
stages of the detector. This provides an effective common mode transient
immunity of 1000 V/μs.
• Input current
threshold: I
F
= 5 mA (max)
• Switching speed: 10MBd (typ.)
• Common mode transient immunity: ±1000 V/μs (min)
• Guaranteed performance over temperature: 0 to 70°C
• Isolation voltage: 2500 V
rms
(min)
• UL recognized: UL1577, file no. E67349
Truth Table
(positive logic)
Input Output
H L
L H
A 0.01 to 0.1μF bypass capacitor must be
connected between pins 8 and 5(see Note 1).
Schematic
Pin Configuration (top view)
V
CC
1
2
3
4
GND
8
7
6
5
1 : Anode 1
2 : Cathode 1
3 : Cathode 2
4 : Anode 2
5 : GND
6 : V
O2
(Output 2)
7 : V
O1
(Output 1)
8 : V
CC
Shield
Unit: mm
TOSHIBA 11−10C4
Weight: 0.54 g (typ.)
V
F1
V
F2
I
F1
I
F2
I
CC
V
CC
V
O1
V
O2
GND
+
−
−
+
1
2
3
4
8
7
6
5
I
O1
I
O2
Shield
Start of commercial production
1986/03
TLP2631
2014-09-01
2
Absolute Maximum Ratings
(no derating required up to 70°C)
Characteristic Symbol Rating Unit
LED
Forward current (each channel) I
F
20 mA
Pulse forward current (each channel)* I
FP
30 mA
Reverse voltage (each channel) V
R
5 V
Detector
Output current (each channel) I
O
16 mA
Output voltage (each channel) V
O
−0.5~7 V
Supply voltage
(1 minute maximum)
V
CC
7 V
Output collector power
dissipation (each channel)
P
O
40 mW
Storage temperature range T
stg
−55~125 °C
Operating temperature range T
opr
−40~85 °C
Lead soldering temperature (10s)** T
sol
260 °C
Isolation voltage
(AC, 1 minute, R.H.≤ 60%, Note 3)
BV
S
2500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* t ≤ 1 msec duration.
** 2mm below seating plane.
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Input current, low level, each channel I
FL
0 ― 250 μA
Input current, high level, each channel I
FH
6.3* ― 20 mA
Supply voltage**, output V
CC
4.5 5 5.5 V
Fan out (TTL load, each channel) N ― ― 8
Operating temperature T
opr
0 ― 70 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
* 6.3mA is a guard banded value which allows for at least 20% CTR degradation.
Initial input current threshold value is 5.0 mA or less.
** This item denotes operating ranges, not meaning of recommended operating conditions.
TLP2631
2014-09-01
3
Electrical Characteristics
(Ta = 0~70°C unless otherwise noted)
Characteristic Symbol Test Condition Min Typ. * Max Unit
Input forward voltage
(each channel)
V
F
I
F
= 10mA, Ta = 25°C ― 1.65 1.75 V
Input diode temperature
coefficient (each channel)
∆V
F
/ ∆Ta I
F
= 10mA ― −2.0 ― mV / °C
Input reverse breakdown
voltage (each channel)
BV
R
I
R
= 10μA, Ta = 25°C 5 ― ― V
Input capacitance
(each channel)
C
T
V
F
= 0, f = 1MHz ― 45 ― pF
High level output current
(each channel)
I
OH
V
CC
= 5.5V, V
O
= 5.5V
I
F
= 250μA
― 1 250 μA
Low level output voltage
(each channel)
V
OL
V
CC
= 5.5V, I
F
= 5mA
I
OL
(sinking) = 13mA
― 0.4 0.6 V
High level supply current
(both channels)
I
CCH
V
CC
= 5.5V, I
F
= 0 ― 14 30 mA
Low level supply current
(both channels)
I
CCL
V
CC
= 5.5V, I
F
= 10mA ― 24 38 mA
Isolation voltage R
S
V
S
= 500V, R.H. ≤ 60% (Note 3) 5×10
10
10
14
― Ω
Capacitance (input−output) C
S
f = 1MHz (Note 3) ― 0.6 ― pF
Input−input leakage current I
I−I
R.H. ≤ 60%, t = 5s
V
I−I
= 500V (Note 6)
― 0.005 ― μA
Resistance (input−input) R
I−I
V
I−I
= 500V (Note 6) ― 10
11
― Ω
Capacitance (input−input) C
I−I
f = 1MHz (Note 6) ― 0.25 ― pF
* All typical values are at V
CC
= 5V, Ta = 25°C.
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TLP2631(F)

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High Speed Optocouplers 2500Vrms 10Mbit/s High CMR
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