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SEP8706-002

P1-P3P4-P4
AlGaAs Infrared Emitting Diode
SEP8706
DESCRIPTION
FEATURES
Side-looking plastic package
•
50¡ (nominal) beam angle
•
880 nm wavelength
•
Higher output power than GaAs at equivalent
drive currents
•
Mechanically and spectrally matched to
SDP8406 phototransistor, SDP8106
photodarlington and SDP8000/8600 series
Schmitt trigger
•
The SEP8706 is an aluminum gallium arsenide infrared
emitting diode molded in a side-emitting smoke gray
plastic package. The chip is positioned to emit radiation
through a plastic lens from the side of the package.
These devices typically exhibit 70% greater power
intensity than gallium arsenide devices at the same
forward current.
DIM_071.ds4
INFRA-20.TIF
OUTLINE DIMENSIONS
3 plc decimals
±0.005(0.12)
Tolerance
2 plc decimals
±0.020(0.51)
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
52
AlGaAs Infrared Emitting Diode
SEP8706
ELECTRICAL CHARACTERISTICS
UNITS
TEST CONDITIONS
MIN
PARAMETER
SYMBOL
TYP
MAX
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
50 mA
Power Dissipation
100 mW [À]
Operating Temperature Range
-40¡C to 85¡C
Storage Temperature Range
-40¡C to 85¡C
Soldering Temperature (5 sec)
240¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.78 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
53
AlGaAs Infrared Emitting Diode
SEP8706
Radiant Intensity vs
Angular Displacement
gra_030.ds4
Angular displacement - degrees
R
e
l
a
t
i
v
e
i
n
t
e
n
s
i
t
y
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Fig. 1 Radiant Intensity vs
Forward Current
gra_028.ds4
Forward current - mA
N
o
r
m
a
l
i
z
e
d
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
0.1
0.2
0.5
1.0
2.0
5.0
10.0
10 20 30 40 50 100
T
A
= 25 °C
Fig. 2
Forward Voltage vs
Forward Current
gra_201.ds4
Forward current - mA
F
o
r
w
a
r
d
v
o
l
t
a
g
e
-
V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
0 10 20 30 40 50
Fig. 3 Forward Voltage vs
Temperature
gra_208.ds4
Temperature - °C
F
o
r
w
a
r
d
v
o
l
t
a
g
e
-
V
1.20
1.25
1.35
1.40
1.50
1.55
1.60
-40 -15 10 35 60
85
I
F
= 20 mA
1.45
1.30
Fig. 4
Spectral Bandwidth
gra_011.ds4
Wavelength - nm
R
e
l
a
t
i
v
e
i
n
t
e
n
s
i
t
y
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
760 800 840 880 920 960 1000
Fig. 5 Coupling Characteristics
with SDP8406
gra_031.ds4
Lens-to-lens separation - inches
L
i
g
h
t
c
u
r
r
e
n
t
-
m
A
0.1
0.2
0.4
0.6
1.0
2
4
6
10
0.01 0.02 0.05 0.1 0.2 0.5 1.0
I
F
= 20 mA
V
CE
= 5V
T
A
= 25 °C
Fig. 6
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
54
P1-P3P4-P4

SEP8706-002

Mfr. #:
Buy SEP8706-002
Manufacturer:
Description:
Infrared Emitters AlGaAs Emiting Diode Side-emitting Pls Pk
Lifecycle:
New from this manufacturer.
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